- 您现在的位置：买卖IC网 > PDF目录299768 > PF38F40L0YUQ0 (NUMONYX) 16M X 16 FLASH 1.8V PROM, PBGA88 PDF资料下载
参数资料
| 型号： | PF38F40L0YUQ0 |
| 厂商： | NUMONYX |
| 元件分类： | PROM |
| 英文描述： | 16M X 16 FLASH 1.8V PROM, PBGA88 |
| 封装： | 8 X 11 MM, 1 MM HEIGHT, ROHS COMPLIANT, VFBGA-88 |
| 文件页数： | 2/99页 |
| 文件大小： | 1419K |
| 代理商： | PF38F40L0YUQ0 |
第1页当前第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页第32页第33页第34页第35页第36页第37页第38页第39页第40页第41页第42页第43页第44页第45页第46页第47页第48页第49页第50页第51页第52页第53页第54页第55页第56页第57页第58页第59页第60页第61页第62页第63页第64页第65页第66页第67页第68页第69页第70页第71页第72页第73页第74页第75页第76页第77页第78页第79页第80页第81页第82页第83页第84页第85页第86页第87页第88页第89页第90页第91页第92页第93页第94页第95页第96页第97页第98页第99页
Intel StrataFlash Wireless Memory (L18)
Intel StrataFlash Wireless Memory (L18) with A/D-Multiplexed I/O
Datasheet
July 2006
10
Order Number: 313295-002US
2.0
Functional Overview
The Intel StrataFlash Wireless Memory (L18) with A/D-Multiplexed I/O device
provides read-while-write and read-while-erase capability with density upgrades
through 256-Mbit. This device provides high performance at low voltage on a 16-bit
data bus. Individually erasable memory blocks are sized for optimum code and data
storage.
Each device density contains one parameter partition and several main partitions. The
flash memory array is grouped into multiple 8-Mbit partitions for the 64-Mbit and
128-Mbit devices, and into multiple 16-Mbit partitions for the 256-Mbit device. By
dividing the flash memory into partitions, program or erase operations can take place
at the same time as read operations.
Although each partition has write, erase and burst read capabilities, simultaneous
operation is limited to write or erase in one partition while other partitions are in read
mode. The device allows burst reads that cross partition boundaries. User application
code is responsible for ensuring that burst reads don’t cross into a partition that is
programming or erasing.
Upon initial power up or return from reset, the device defaults to asynchronous read
mode. Configuring the Read Configuration Register enables synchronous burst-mode
reads. In synchronous burst mode, output data is synchronized with a user-supplied
clock signal. A WAIT signal provides easy CPU-to-flash memory synchronization.
In addition to the enhanced architecture and interface, the device incorporates
technology that enables fast factory program and erase operations. Designed for low-
voltage systems, it supports read operations with VCC at 1.8 V, and erase and program
operations with VPP at 1.8 V or 9.0 V. Buffered Enhanced Factory Programming
(Buffered EFP) provides the fastest flash array programming performance with VPP at
9.0 V
, which increases factory throughput. With V
PP
at 1.8 V, VCC and VPP can be tied
together for a simple, ultra low power design. In addition to voltage flexibility, a
dedicated VPP connection provides complete data protection when VPP is less than
VPPLK.
A Command User Interface (CUI) is the interface between the system processor and all
internal operations of the device. An internal Write State Machine (WSM) automatically
executes the algorithms and timings necessary for block erase and program. A Status
Register indicates erase or program completion and any errors that may have occurred.
An industry-standard command sequence invokes program and erase automation. Each
erase operation erases one block. The Erase Suspend feature allows system software to
pause an erase cycle to read or program data in another block. Program Suspend
allows system software to pause programming to read other locations. Data is
programmed in word increments (x16).
The Intel StrataFlash Wireless Memory (L18) device offers power savings through
Automatic Power Savings (APS) mode and standby mode. The device automatically
enters APS following read-cycle completion. Standby is initiated when the system
deselects the device by deasserting CE# or by asserting RST#. Combined, these
features can significantly reduce power consumption.
The device’s protection register allows unique flash device identification that can be
used to increase system security. Also, the individual Block Lock feature provides zero-
latency block locking and unlocking.
相关PDF资料 |
PDF描述 |
|---|---|
| PF50WIW2K-3.5VF-W6 | SINGLE COLOR LED, INCAND WHITE |
| PD50WO3K-28V-T | SINGLE COLOR LED, SUPER ORANGE |
| PD50WR3K-24V-W6 | SINGLE COLOR LED, ULTRA RED |
| PF50WAG6K-240VAC-W6 | SINGLE COLOR LED, AQUA GREEN |
| PF50WW1K-12V-W6 | SINGLE COLOR LED, COOL WHITE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| PF38F4470LLYBBEA | 制造商:Micron Technology Inc 功能描述:256LCR/256LCR/256SD SCSP 1.8 X16D LF - Trays |
| PF38F5050M0Y0CFA | 制造商:Micron Technology Inc 功能描述:512BA/64PS SCSP 1.8 LF MICRON - Trays |
| PF38F5050M0Y0CFB | 制造商:Micron Technology Inc 功能描述:512BA/64PS SCSP 1.8 LF MICRON - Tape and Reel |
| PF38F5050M0Y0CGA | 制造商:Micron Technology Inc 功能描述:512BA/64PS SCSP 1.8 LF MICRON - Trays |
| PF38F5060M0Y0BEA | 功能描述:IC FLASH 512MBIT 133MHZ 105SCSP RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:32K (4K x 8) 速度:100kHz，400kHz 接口:I²C，2 线串口 电源电压:2.5 V ~ 5.5 V 工作温度:-40°C ~ 125°C 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商设备封装:8-SOIC 包装:带卷 (TR) 其它名称:CAV24C32WE-GT3OSTR |
发布紧急采购，3分钟左右您将得到回复。