参数资料
型号: S29WS128J0PBFW002
厂商: SPANSION LLC
元件分类: PROM
英文描述: 8M X 16 FLASH 1.8V PROM, 55 ns, PBGA84
封装: 8 X 11.60 MM, LEAD FREE, FBGA-84
文件页数: 93/97页
文件大小: 2421K
代理商: S29WS128J0PBFW002
May 11, 2006 S29WS-J_00_A6
S29WS128J/064J
93
D a ta
Sh eet
Erase and Programming Performance
Notes:
1. Typical program and erase times assume the following conditions: 25
°C, 1.8 V VCC, 100K cycles. Additionally,
programming typicals assumes a checkerboard pattern.
2. Under worst case conditions of 90°C, VCC = 1.65 V, 1,000,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed.
4. In the pre-programming step of the Embedded Erase algorithm, all words are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command.
See Table 18, “Command Definitions,” on page 60 for further information on command definitions.
6. The device has a minimum erase and program cycle endurance of 100,000 cycles.
Parameter
Unit
Comments
Sector Erase Time
32 Kword
<0.4
<2
s
Excludes 00h programming
prior to erasure (Note 4)
4 Kword
<0.2
<2
Chip Erase Time
128J
<103
s
064J
<53
Word Programming Time
<6
<100
s
Excludes system level
overhead (Note 5)
Accelerated Word Programming Time
<4
<67
s
Chip Programming Time
128J
<50.4
s
Excludes system level
overhead (Note 5)
064J
<25.2
Accelerated Chip
Programming Time
128J
<33
s
064J
<17
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