参数资料
| 型号： | SC900841JVKR2 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 162/192页 |
| 文件大小： | 0K |
| 描述： | IC POWER MGT 338-MAPBGA |
| 标准包装： | 2,000 |
| 应用： | PC，PDA |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 338-TFBGA |
| 供应商设备封装： | 338-MAPBGA |
| 包装： | 带卷 (TR) |
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FUNCTIONAL DEVICE OPERATION
ADC SUBSYSTEM
Table 105. Application Supply Voltage Reading Coding
LICON bit in the FSLADCCNTL register to 1. Since the voltage
range of the coin cell exceeds the input voltage range of the
Conversion Code
1 111 111 111
1 000 010 100
Voltage at ADC input
2.400 V
1.250 V
Voltage at VPWR
4.800 V
2.500 V
ADC, the COINCELL voltage is first scaled as V COIN *2/3.
Table 107. Backup (Coin Cell) Voltage Reading Coding
Conversion Code Voltage at ADC input Voltage at COINCELL
0 000 000 000
0.000 V
0.000 V
1 111 111 111
2.400 V
3.600 V
CHARGER CURRENT (IF USED)
Channel 24 can be used to read the charge current by
1 000 000 000
0 000 000 000
1.200 V
0.000 V
1.800 V
0.000 V
monitoring the voltage drop over the charge current sense
resistor. This can be enabled by setting the CHRGICON bit in
the FSLADCCNTL register to 1. This resistor is connected
between the ISNSBATP and ISNSBATN pins. The voltage
difference is first amplified to fit the ADC input range as
V(VISNSBATP-VISNSBATN)*4. The conversion is read out in
a 2’s complement format, see Table 106 . The positive reading
corresponds to the current flow from charger to battery, the
negative reading to the current flowing into the charger
terminal.
The value of the sense resistor used determines not only the
accuracy of the result as well as the available conversion
range, but also the charge current levels. It is therefore advised
not to select another value other than those suggested in the
Table 106. Charger Current Reading Coding
BATTERY DETECT (IF USED)
When a phone is on and supplied by the charger, SIM
removal has to be detected to avoid fraudulent use of the
phone. An easy way of doing so is to place the SIM card holder
under the battery pack and perform a battery thermistor
presence check. When the thermistor terminal becomes high-
impedance, the battery is considered being removed. This
detection function can be available at Channel 26 of the ADC
by setting the BATDETVCON bit in the FSLADCCNTL register
to 1. When not charging, the SIM removal function is not
required to operate. Although the additional current drain due
to the battery detect function is small, it is advised to disable the
function when not charging to save this current.
TOUCH SCREEN INTERFACE
CONVERSION
CODE
0 111 111 111
0 000 000 001
0 000 000 000
1 111 111 111
1 000 000 000
VOLTAGE
AT ADC
INPUT
1200 mV
2.346 mV
0.000 mV
-2.346 mV
-1200 mV
V BAT -
V ISNSBAT
300.000 mV
0.600 mV
0.000 mV
-0.600 mV
-300.000 mV
CURRENT
THROUGH
20 M
3.000 A
0.0059 A
0.000 A
0.0059 A
3.000 A
CURRENT
FLOW
To
Application/
Battery
To
Application/
Battery
-
To Charger
Connection
To Charger
Connection
The PMIC touch screen support consists of four analog input
channels with built in bias control. The BIAS FET control bits
are part of the ADC round robin address register ADCADDRx.
The touch screen X plate is connected to ADIN10 (X+) and
ADIN11 (X-), while the Y plate is connected to ADIN12(Y+) and
ADIN13(Y-). A local supply, TSREF, of 1.2 V will serve as a
reference.
The system processor will handle the touch screen
sequencing and any necessary conversion delays. The system
processor will direct the desired bias control for every reading
though the ADCADDRx registers. If FET biasing is enabled
though the ADCADDRx registers, then touch screen readings
will start according based on the channels chosen, and also by
the ADCADDRx registers. If the touch screen is not used, then
the above inputs can be used as general purpose inputs. In this
case, the bias control will always be programmed to no bias.
BACKUP VOLTAGE (IF USED)
Figure 76 is a touch screen representation.
Channel 25 can be used to read the voltage of the coin cell
connected to the COINCELL. This is enabled by setting the
900841
Analog Integrated Circuit Device Data
162
Freescale Semiconductor
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