参数资料
型号: W9725G6KB-25I
厂商: Winbond Electronics
文件页数: 19/87页
文件大小: 0K
描述: IC DDR2 SDRAM 256MBIT 84WBGA
标准包装: 209
格式 - 存储器: RAM
存储器类型: DDR2 SDRAM
存储容量: 256M(16Mx16)
速度: 2.5ns
接口: 并联
电源电压: 1.7 V ~ 1.9 V
工作温度: -40°C ~ 95°C
封装/外壳: 84-TFBGA
供应商设备封装: 84-WBGA(8x12.5)
包装: *
其它名称: Q7118748
W9725G6KB
CMD
EMRS
NOP
NOP
NOP
NOP
NOP
CLK
CLK
ODT
t IS
t MOD,max
t AOFD
t MOD,min
Rtt
Old setting
Updating
New setting
1) EMRS command directed to EMR(1), which updates the information in EMR(1)[A6,A2], i.e. Rtt (Nominal).
2) "setting" in this diagram is the Register and I/O setting, not what is measured from outside.
Figure 10 – ODT update delay timing - t MOD
However, to prevent any impedance glitch on the channel, the following conditions must be met.
?
?
t AOFD must be met before issuing the EMRS command.
ODT must remain LOW for the entire duration of t MOD window, until t MOD ,max is met.
Now the ODT is ready for normal operation with the new setting, and the ODT signal may be raised
again to turned on the ODT. Following timing diagram shows the proper Rtt update procedure.
CLK
CLK
CMD
EMRS
NOP
NOP
NOP
NOP
NOP
ODT
t IS
t AOFD
t MOD,max
t AOND
Rtt
Old setting
New setting
1) EMRS command directed to EMR(1), which updates the information in EMR(1)[A6,A2], i.e. Rtt (Nominal).
2) "setting" in this diagram is what is measured from outside.
Figure 11 – ODT update delay timing - t MOD , as measured from outside
Publication Release Date: Sep. 03, 2012
- 19 -
Revision A03
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