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| 型号： | W9725G6KB-25I |
| 厂商： | Winbond Electronics |
| 文件页数： | 47/87页 |
| 文件大小： | 0K |
| 描述： | IC DDR2 SDRAM 256MBIT 84WBGA |
| 标准包装： | 209 |
| 格式 - 存储器： | RAM |
| 存储器类型： | DDR2 SDRAM |
| 存储容量： | 256M（16Mx16） |
| 速度： | 2.5ns |
| 接口： | 并联 |
| 电源电压： | 1.7 V ~ 1.9 V |
| 工作温度： | -40°C ~ 95°C |
| 封装/外壳： | 84-TFBGA |
| 供应商设备封装： | 84-WBGA（8x12.5） |
| 包装： | * |
| 其它名称： | Q7118748 |
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W9725G6KB
Notes:
1. All voltages are referenced to V SS .
2. Tests for AC timing, I DD , and electrical AC and DC characteristics may be conducted at nominal reference/supply voltage
levels, but the related specifications and device operation are guaranteed for the full voltage range specified. ODT is
disabled for all measurements that are not ODT-specific.
3. AC timing reference load:
VDDQ
DQ
Output
DUT
DQS, DQS
Figure 16
Timing
25 Ω
reference
point
– AC timing reference load
VTT = VDDQ/2
4. This is a minimum requirement. Minimum read to precharge timing is AL + BL / 2 provided that the tRTP and tRAS(min)
have been satisfied.
5. If refresh timing is violated, data corruption may occur and the data must be re-written with valid data before a valid READ
can be executed.
6. This is an optional feature. For detailed information, please refer to “ Operating Temperature Condition ” section 10.2 in
this data sheet.
7. tCKE min of 3 clocks means CKE must be registered on three consecutive positive clock edges. CKE must remain at the
valid input level the entire time it takes to achieve the 3 clocks of registration. Thus, after any CKE transition, CKE may not
transition from its valid level during the time period of tIS + 2 x tCK + tIH.
8. A minimum of two clocks (2 * nCK) is required irrespective of operating frequency.
9. tWTR is at least two clocks (2 * nCK) independent of operation frequency.
10. There are two sets of values listed for Command/Address input setup time: tIS(base) and tIS(ref). The tIS(ref) value (for
reference only) is equivalent to the baseline value of tIS(base) at VREF when the slew rate is 1.0 V/nS. The baseline value
tIS(base) is the JEDEC defined value, referenced from the input signal crossing at the VIH(ac) level for a rising signal and
VIL(ac) for a falling signal applied to the device under test. See Figure 17. If the Command/Address slew rate is not equal to
1.0 V/nS, then the baseline values must be derated by adding the values from table of tIS/tIH derating values for DDR2-667,
DDR2-800 and DDR2-1066 (page 55).
CLK
CLK
t IS(base) t IH(base)
t IS(base) t IH(base)
Logic levels
V DDQ
V IH(ac) min
V IH(dc) min
V REF(dc)
V IL(dc) max
V IL(ac) max
V SS
V REF levels
t IS(ref)
t IH(ref)
t IS(ref)
t IH(ref)
Figure 17
– Differential input waveform timing – tIS and tIH
Publication Release Date: Sep. 03, 2012
- 47 -
Revision A03
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相关代理商/技术参数 |
参数描述 |
|---|---|
| W9725G6KB25I TR | 制造商:Winbond Electronics Corp 功能描述:256M DDR2-800, X16, IND TEMP |
| W9725G6KB25K | 制造商:WINBOND 制造商全称:Winbond 功能描述:DLL aligns DQ and DQS transitions with clock, Data masks (DM) for write data, Write Data Mask |
| W9725G6KB-3 | 制造商:WINBOND 制造商全称:Winbond 功能描述:DLL aligns DQ and DQS transitions with clock, Data masks (DM) for write data, Write Data Mask |
| W9725G8JB | 制造商:WINBOND 制造商全称:Winbond 功能描述:8M ? 4 BANKS ? 8 BIT DDR2 SDRAM |
| W9725G8JB25 | 制造商:Winbond Electronics Corp 功能描述:DRAM Chip DDR2 SDRAM 256M-Bit 32Mx8 1.8V 60-Pin WBGA |
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