- 您现在的位置：买卖IC网 > PDF目录223993 > HY5MS5B6LF-H (HYNIX SEMICONDUCTOR INC) 16M X 16 DDR DRAM, 6.5 ns, PBGA60 PDF资料下载
参数资料
| 型号： | HY5MS5B6LF-H |
| 厂商： | HYNIX SEMICONDUCTOR INC |
| 元件分类： | DRAM |
| 英文描述： | 16M X 16 DDR DRAM, 6.5 ns, PBGA60 |
| 封装： | 8 X 12 MM, 1 MM HEIGHT, 0.80 MM PITCH, FBGA-80 |
| 文件页数： | 19/60页 |
| 文件大小： | 676K |
| 代理商： | HY5MS5B6LF-H |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页当前第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页第32页第33页第34页第35页第36页第37页第38页第39页第40页第41页第42页第43页第44页第45页第46页第47页第48页第49页第50页第51页第52页第53页第54页第55页第56页第57页第58页第59页第60页
Rev 0.2 / Oct. 2004
26
11Preliminary
Mobile DDR Memory 256Mbit (16Mx16bit)
DESELECT
The DESELECT function (CS = High) prevents new commands from being executed by the Mobile DDR SDRAM. The
LPDDR SDRAM is effectively deselected. Operations already in progress are not affected.
NO OPERATION
The NO OPERATION (NOP) command is used to perform a NOP to a Mobile DDR SDRAM that is selected (CS = Low,
RAS = CAS = WE = High). This prevents unwanted commands from being registered during idle or wait states. Oper-
ations already in progress are not affected. (see to next figure)
ACTIVE
The Active command is used to activate a row in particular bank for a subsequent Read or Write access. The value of
the BA0,BA1 inputs selects the bank, and the address provided on A0-A12(or the highest address bit) selects the row.
(see to next figure)
Before any READ or WRITE commands can be issued to a bank within the Mobile DDR SDRAM, a row in that bank
must be opened. This is accomplished via the ACTIVE command, which selects both the bank and the row to be acti-
vated.
The row remains active until a PRECHARGE (or READ with AUTO PRECHARGE or WRITE with AUTO PRECHARGE) com-
mand is issued to the bank.
A PRECHARGE (or READ with AUTO PRECHARGE or WRITE with AUTO PRECHARGE) command must be issued before
opening a different row in the same bank.
CS
A0~A9,
A11, A12
WE
CAS
RAS
Don't Care
/CLK
CLK
CKE
High-Z
BA0,1
CS
A0~A9,
A11, A12
WE
Bank Address
CAS
RAS
Row Address
Don't Care
/CLK
CLK
CKE
High-Z
RA
BA
BA0,1
NOP command
ACTIVATING A SPECIFIC
ROW IN A SPECIFIC BANK
相关PDF资料 |
PDF描述 |
|---|---|
| HY5PS1G831ALFP-C4 | 128M X 8 DDR DRAM, PBGA68 |
| HY5PS1G831ALFP-Y5 | 128M X 8 DDR DRAM, PBGA68 |
| HY5RS573225AFP-16L | 8M X 32 DDR DRAM, 0.28 ns, PBGA136 |
| HY5V28CF-S | 16M X 8 SYNCHRONOUS DRAM, 6 ns, PBGA54 |
| HY5V28CLF-S | 16M X 8 SYNCHRONOUS DRAM, 6 ns, PBGA54 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HY5MS7B2BLFP-H | 制造商:SK Hynix Inc 功能描述: |
| HY5N50FT | 制造商:HY 制造商全称:HY ELECTRONIC CORP. 功能描述:500V / 5A N-Channel Enhancement Mode MOSFET |
| HY5N50T | 制造商:HY 制造商全称:HY ELECTRONIC CORP. 功能描述:500V / 5A N-Channel Enhancement Mode MOSFET |
| HY5P | 制造商:LEM 制造商全称:LEM 功能描述:Current Transducers HY 5 to 25-P/SP1 |
| HY5-P | 制造商:LEM Holdings SSA 功能描述:CURRENT TRANSFORMER, HY 5-P |
发布紧急采购，3分钟左右您将得到回复。