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参数资料
| 型号： | HY5MS5B6LF-H |
| 厂商： | HYNIX SEMICONDUCTOR INC |
| 元件分类： | DRAM |
| 英文描述： | 16M X 16 DDR DRAM, 6.5 ns, PBGA60 |
| 封装： | 8 X 12 MM, 1 MM HEIGHT, 0.80 MM PITCH, FBGA-80 |
| 文件页数： | 25/60页 |
| 文件大小： | 676K |
| 代理商： | HY5MS5B6LF-H |
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Rev 0.2 / Oct. 2004
31
11Preliminary
Mobile DDR Memory 256Mbit (16Mx16bit)
READ to READ
Data from a read burst may be concatenated or truncated by a subsequent READ command. The first data from the
new burst follows either the last element of a completed burst or the last desired element of a longer burst that is
being truncated. The new READ command should be issued X cycles after the first READ command, where X equals
the number of desired data-out element pairs (pairs are required by the 2n prefetch architecture).
Consective Read Bursts
A READ command can be initiated on any clock cycle following a previous READ command. Non-consecutive Reads are
shown in Figure. Full-speed random read accesses within a page or pages can be performed as shown in Fig.
/CLK
CLK
Do
n
Do
b
Do
n
READ
NOP
READ
NOP
BA, Col
n
CL =3
CL =2
Don't Care
1) Do
n (or b): Data out from column n
2) BA, Col
n (b) = Bank A, Column n (b)
3) Burst Length = 4 : 3 subseqnent elements of Data Out appear in the programmed order following
Do
n (b)
4) Shown with nominal tAC, tDQSCK and tDQSQ
Command
Address
DQS
DQ
DQS
DQ
BA, Col
b
Do
b
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HY5MS7B2BLFP-H | 制造商:SK Hynix Inc 功能描述: |
| HY5N50FT | 制造商:HY 制造商全称:HY ELECTRONIC CORP. 功能描述:500V / 5A N-Channel Enhancement Mode MOSFET |
| HY5N50T | 制造商:HY 制造商全称:HY ELECTRONIC CORP. 功能描述:500V / 5A N-Channel Enhancement Mode MOSFET |
| HY5P | 制造商:LEM 制造商全称:LEM 功能描述:Current Transducers HY 5 to 25-P/SP1 |
| HY5-P | 制造商:LEM Holdings SSA 功能描述:CURRENT TRANSFORMER, HY 5-P |
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