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参数资料
| 型号： | HY5MS5B6LF-H |
| 厂商： | HYNIX SEMICONDUCTOR INC |
| 元件分类： | DRAM |
| 英文描述： | 16M X 16 DDR DRAM, 6.5 ns, PBGA60 |
| 封装： | 8 X 12 MM, 1 MM HEIGHT, 0.80 MM PITCH, FBGA-80 |
| 文件页数： | 47/60页 |
| 文件大小： | 676K |
| 代理商： | HY5MS5B6LF-H |
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Rev 0.2 / Oct. 2004
51
11Preliminary
Mobile DDR Memory 256Mbit (16Mx16bit)
DEEP POWER-DOWN
The Deep Power-Down (DPD) mode enables very low standby currents. All internal voltage generators inside the
LPDDR are stopped and all memory data is lost in this mode.
All the information in the Mode Register and the Extended Mode Register is lost. Next Figure,
DEEP POWER-DOWN
COMMAND shows the DEEP POWER-DOWN command All banks must be in idle state with no activity on the data bus
prior to entering the DPD mode. While in this state, CKE must be held in a constant low state.
To exit the DPD mode, CKE is taken high after the clock is stable and NOP command must be maintained for at least
200 us. After 200 us a complete re-initialization routing is required following steps 4 through 11 as defined for the ini-
tialization sequence. (Page 60, 61)
DEEP POWER-DOWN COMMAND
CS
A0 ~ A9
A11, A12
WE
CAS
RAS
Don't Care
/CLK
CLK
CKE
BA0, 1
CKE_Low
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HY5MS7B2BLFP-H | 制造商:SK Hynix Inc 功能描述: |
| HY5N50FT | 制造商:HY 制造商全称:HY ELECTRONIC CORP. 功能描述:500V / 5A N-Channel Enhancement Mode MOSFET |
| HY5N50T | 制造商:HY 制造商全称:HY ELECTRONIC CORP. 功能描述:500V / 5A N-Channel Enhancement Mode MOSFET |
| HY5P | 制造商:LEM 制造商全称:LEM 功能描述:Current Transducers HY 5 to 25-P/SP1 |
| HY5-P | 制造商:LEM Holdings SSA 功能描述:CURRENT TRANSFORMER, HY 5-P |
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