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参数资料
| 型号： | HY5MS5B6LF-H |
| 厂商： | HYNIX SEMICONDUCTOR INC |
| 元件分类： | DRAM |
| 英文描述： | 16M X 16 DDR DRAM, 6.5 ns, PBGA60 |
| 封装： | 8 X 12 MM, 1 MM HEIGHT, 0.80 MM PITCH, FBGA-80 |
| 文件页数： | 40/60页 |
| 文件大小： | 676K |
| 代理商： | HY5MS5B6LF-H |
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Rev 0.2 / Oct. 2004
45
11Preliminary
Mobile DDR Memory 256Mbit (16Mx16bit)
PRECHARGE
The PRECHARGE command is used to deactivate the open row in a particular bank or the open row in all banks.
Another command to the same bank (or banks) being precharged must not be issued until the precharge time (tRP) is
completed.
If one bank is to be precharged, the particular bank address needs to be specified. If all banks are to be precharged,
A10 should be set high along with the PRECHARGE command. If A10 is high, BA0 and BA1 are ignored. A PRECHARGE
command will be treated as a NOP if there is no open row in that bank, or if the previously open row is already in the
process of precharging.
PRECHARGE command
AUTO PRECHARGE
Auto Precharge is a feature which performs the same individual bank precharge function as described above, but with-
out requiring an explicit command.
This is accomplished by using A10 (A10=high), to enable auto precharge in conjunction with a specific Read or Write
command. This precharges the bank/row after the Read or Write burst is complete.
Auto precharge is non persistent, so it should be enabled with a Read or Write command each time auto precharge is
desired. Auto precharge ensures that a precharge is initiated at the earliest valid stage within a burst.
The user must not issue another command to the same bank until the precharge time (tRP) is completed.
Don't Care
CS
A0~A9
A11, A12
WE
CAS
RAS
/CLK
CLK
CKE
High-Z
BA
BA0,1
A10
Bank Address
A10 defines the precharge
mode when a precharge
command, a read command
or a write command is
issued.
If A10 = High when a
precharge command is
issued, all banks are
precharged.
If A10 = Low when a
precharge command is
issued, only the bank that is
selected by BA1/BA0 is
precharged.
If A10 = High when read or
write command, auto-
precharge function is
enabled.
While A10 = Low, auto-
precharge function is
disabled.
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| HY5RS573225AFP-16L | 8M X 32 DDR DRAM, 0.28 ns, PBGA136 |
| HY5V28CF-S | 16M X 8 SYNCHRONOUS DRAM, 6 ns, PBGA54 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HY5MS7B2BLFP-H | 制造商:SK Hynix Inc 功能描述: |
| HY5N50FT | 制造商:HY 制造商全称:HY ELECTRONIC CORP. 功能描述:500V / 5A N-Channel Enhancement Mode MOSFET |
| HY5N50T | 制造商:HY 制造商全称:HY ELECTRONIC CORP. 功能描述:500V / 5A N-Channel Enhancement Mode MOSFET |
| HY5P | 制造商:LEM 制造商全称:LEM 功能描述:Current Transducers HY 5 to 25-P/SP1 |
| HY5-P | 制造商:LEM Holdings SSA 功能描述:CURRENT TRANSFORMER, HY 5-P |
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