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参数资料
| 型号： | HY5MS5B6LF-H |
| 厂商： | HYNIX SEMICONDUCTOR INC |
| 元件分类： | DRAM |
| 英文描述： | 16M X 16 DDR DRAM, 6.5 ns, PBGA60 |
| 封装： | 8 X 12 MM, 1 MM HEIGHT, 0.80 MM PITCH, FBGA-80 |
| 文件页数： | 20/60页 |
| 文件大小： | 676K |
| 代理商： | HY5MS5B6LF-H |
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Rev 0.2 / Oct. 2004
27
11Preliminary
Mobile DDR Memory 256Mbit (16Mx16bit)
Once a row is Open(with an ACTIVE command) a READ or WRITE command may be issued to that row, subject to the
tRCD specification. tRCD (
MIN) should be divided by the clock period and rounded up to the next whole number to
determine the earliest clock edge after the ACTIVE command on which a READ or WRITE command can be entered.
A subsequent ACTIVE command to a different row in the same bank can only be issued after the previous active row
has been closed(precharge). The minimum time interval between successive ACTIVE commands to the same bank is
defined by tRC.
A subsequent ACTIVE command to another bank can be issued while the first bank is being accessed, which results in
a reduction of total row-access overhead. The minimum time interval between successive ACTIVE commands to differ-
ent banks is defined by tRRD.
Don't Care
Once a row is Open(with an ACTIVE command) a READ or WRITE command may be issued to that row, subject to the
tRCD specification. tRCD (MIN) should be divided by the clock period and rounded up to the next whole number to
determine the earliest clock edge after the ACTIVE command on which a READ or WRITE command can be entered.
/CLK
CLK
NOP
tRCD
Command
Address
Write A
With A/P
Bank
B
ACT
NOP
Bank A
ACT
Bank A
Col
Bank
B
Row
Bank A
Row
Bank
A
ACT
Bank
A
Row
tRRD
tRC
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| HY5PS1G831ALFP-C4 | 128M X 8 DDR DRAM, PBGA68 |
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| HY5RS573225AFP-16L | 8M X 32 DDR DRAM, 0.28 ns, PBGA136 |
| HY5V28CF-S | 16M X 8 SYNCHRONOUS DRAM, 6 ns, PBGA54 |
| HY5V28CLF-S | 16M X 8 SYNCHRONOUS DRAM, 6 ns, PBGA54 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HY5MS7B2BLFP-H | 制造商:SK Hynix Inc 功能描述: |
| HY5N50FT | 制造商:HY 制造商全称:HY ELECTRONIC CORP. 功能描述:500V / 5A N-Channel Enhancement Mode MOSFET |
| HY5N50T | 制造商:HY 制造商全称:HY ELECTRONIC CORP. 功能描述:500V / 5A N-Channel Enhancement Mode MOSFET |
| HY5P | 制造商:LEM 制造商全称:LEM 功能描述:Current Transducers HY 5 to 25-P/SP1 |
| HY5-P | 制造商:LEM Holdings SSA 功能描述:CURRENT TRANSFORMER, HY 5-P |
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