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参数资料
| 型号： | HY5MS5B6LF-H |
| 厂商： | HYNIX SEMICONDUCTOR INC |
| 元件分类： | DRAM |
| 英文描述： | 16M X 16 DDR DRAM, 6.5 ns, PBGA60 |
| 封装： | 8 X 12 MM, 1 MM HEIGHT, 0.80 MM PITCH, FBGA-80 |
| 文件页数： | 34/60页 |
| 文件大小： | 676K |
| 代理商： | HY5MS5B6LF-H |
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Rev 0.2 / Oct. 2004
4
11Preliminary
Mobile DDR Memory 256Mbit (16Mx16bit)
The Hynix HY5MS5B6LF(P)-xE has the special Low Power function of Auto TCSR(Temperature Compensated Self
Refresh) to reduce self refresh current consumption. Since an internal temperature sensor is implanted, it enables to
automatically adjust refresh rate according to temperature without external EMRS command.
Deep Power Down Mode is a additional operating mode for Low Power DDR SDRAMs(Mobile DDR). This mode can
achieve maximum power reduction by removing power to the memory array within each DDR SDRAMs. By using this
feature, the system can cut off alomost all DRAM power without adding the cost of a power switch and giving up
mother-board power-line layout flexibility.
All inputs are LV-CMOS compatible. Devices will have a VDD and VDDQ supply of 1.8V (nominal).
The devices are available in the following packages:
- FBGA_60Ball : 8mm x 12mm x 1.0 mm
(max)
256M Mobile DDR ORDERING INFORMATION
Notice : Clock Frequency DDR333 / 166MHz Product :
- Contact Hynix Office for product availability.
Part Number
Clock Frequency
CAS
Latency
Organization
Interface
Package
HY5MS5B6LF-H
DDR266
133MHz
3
4banks x 4Mb x 16
LVCMOS
Lead
HY5MS5B6LF-S
DDR200
105MHz
3
HY5MS5B6LFP-H
DDR266
133MHz
3
Lead Free
HY5MS5B6LFP-S
DDR200
105MHz
3
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HY5MS7B2BLFP-H | 制造商:SK Hynix Inc 功能描述: |
| HY5N50FT | 制造商:HY 制造商全称:HY ELECTRONIC CORP. 功能描述:500V / 5A N-Channel Enhancement Mode MOSFET |
| HY5N50T | 制造商:HY 制造商全称:HY ELECTRONIC CORP. 功能描述:500V / 5A N-Channel Enhancement Mode MOSFET |
| HY5P | 制造商:LEM 制造商全称:LEM 功能描述:Current Transducers HY 5 to 25-P/SP1 |
| HY5-P | 制造商:LEM Holdings SSA 功能描述:CURRENT TRANSFORMER, HY 5-P |
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