参数资料
型号: HY5MS5B6LF-H
厂商: HYNIX SEMICONDUCTOR INC
元件分类: DRAM
英文描述: 16M X 16 DDR DRAM, 6.5 ns, PBGA60
封装: 8 X 12 MM, 1 MM HEIGHT, 0.80 MM PITCH, FBGA-80
文件页数: 37/60页
文件大小: 676K
代理商: HY5MS5B6LF-H
Rev 0.2 / Oct. 2004
42
11Preliminary
Mobile DDR Memory 256Mbit (16Mx16bit)
WRITE to PRECHARGE
Data for any WRITE burst may be followed by a subsequent PRECHARGE command to the same bank (provided Auto
Precharge was not activated). To follow a WRITE without truncating the WRITE burst, tWR should be met as shown in
Fig.
Non-Interrupting Write to Precharge
/CLK
CLK
WRITE
NOP
PRE
BA, Col
b
Don't Care
1) DI b (n) = Data In to column b (column n)
2) 3 subsequent elements of Data In are applied in the programmed order following DI b. 3 subsequent elements
of Data In are applied in the programmed order following DI n.
3) Non-interrupted bursts of 4 are shown.
4) Each WRITE command may be to any active bank
Command
Address
DQS
DQ
NOP
DM
tDQSS
max
BA
a(or All)
tWR
Di
b
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