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参数资料
| 型号： | RC28F00BM29EWHA |
| 厂商： | Micron Technology Inc |
| 文件页数： | 13/75页 |
| 文件大小： | 0K |
| 描述： | IC FLASH 2GBIT 100NS 64FBGA |
| 标准包装： | 184 |
| 系列： | Axcell™ |
| 格式 - 存储器： | 闪存 |
| 存储器类型： | 闪存 - 或非 |
| 存储容量： | 2G（256M x 8，128M x 16） |
| 速度： | 100ns |
| 接口： | 并联 |
| 电源电压： | 2.7 V ~ 3.6 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 64-LBGA |
| 供应商设备封装： | 64-FBGA（11x13） |
| 包装： | 托盘 |
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256Mb, 512Mb, 1Gb, 2Gb: 3V Embedded Parallel NOR Flash
Memory Organization
Table 4: Signal Descriptions (Continued)
Name
V CC
V CCQ
V SS
RFU
Type
Supply
Supply
Supply
–
Description
Supply voltage: Provides the power supply for READ, PROGRAM, and ERASE operations.
The command interface is disabled when V CC <= V LKO . This prevents WRITE operations from
accidentally damaging the data during power-up, power-down, and power surges. If the pro-
gram/erase controller is programming or erasing during this time, then the operation aborts
and the contents being altered will be invalid.
A 0.1 μ F capacitor should be connected between V CC and V SS to decouple the current surges
from the power supply. The PCB track widths must be sufficient to carry the currents required
during PROGRAM and ERASE operations (see DC Characteristics).
I/O supply voltage: Provides the power supply to the I/O pins and enables all outputs to be
powered independently from V CC .
Ground: All V SS pins must be connected to the system ground.
Reserved for future use: RFUs should be not connected.
Memory Organization
Memory Configuration
The main memory array is divided into 128KB or 64KW uniform blocks.
Memory Map – 256Mb–2Gb Density
Table 5: Blocks[2047:0]
Block
Address Range (x8)
Block
Address Range (x16)
Block
2047
?
1023
?
511
?
255
?
127
?
63
?
0
Size
128KB
Start
FFE 0000h
?
7FE 0000h
?
3FE 0000h
?
1FE 0000h
?
0FE 0000h
?
07E 0000h
?
000 0000h
End
FFF FFFFh
?
7FF FFFFh
?
3FF FFFFh
?
1FF FFFFh
?
0FF FFFFh
?
07F FFFFh
?
001 FFFFh
Size
64KW
Start
7FF 0000h
?
3FF 0000h
?
1FF 0000h
?
0FF 0000h
?
07F 0000h
?
03F 0000h
?
000 0000h
End
7FF FFFFh
?
3FF FFFFh
?
1FF FFFFh
?
0FF FFFFh
?
07F FFFFh
?
03F FFFFh
?
000 FFFFh
Note:
1. 256Mb device = blocks 0–255; 512Mb device = blocks 0–511; 1Gb device = blocks 0–1023;
2Gb device = blocks 0–2047, including upper and lower die.
PDF: 09005aef849b4b09
m29ew_256mb_2gb.pdf - Rev. B 8/12 EN
13
Micron Technology, Inc. reserves the right to change products or specifications without notice.
? 2012 Micron Technology, Inc. All rights reserved.
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