参数资料
型号: RC28F00BM29EWHA
厂商: Micron Technology Inc
文件页数: 22/75页
文件大小: 0K
描述: IC FLASH 2GBIT 100NS 64FBGA
标准包装: 184
系列: Axcell™
格式 - 存储器: 闪存
存储器类型: 闪存 - 或非
存储容量: 2G(256M x 8,128M x 16)
速度: 100ns
接口: 并联
电源电压: 2.7 V ~ 3.6 V
工作温度: -40°C ~ 85°C
封装/外壳: 64-LBGA
供应商设备封装: 64-FBGA(11x13)
包装: 托盘
256Mb, 512Mb, 1Gb, 2Gb: 3V Embedded Parallel NOR Flash
Registers
Table 10: Block Protection Status (Continued)
Nonvolatile
Block
Protection Bit
Nonvolatile
Volatile
Protection
Lock Bit 1
Protection Bit 2 Protection Bit 3
Status
Block Protection Status
0
0
0
01h
Block protected by nonvolatile protection bit and vola-
tile protection bit; nonvolatile protection bit unchange-
able.
Notes:
1. Nonvolatile protection bit lock bit: when cleared to 1, all nonvolatile protection bits are
unlocked; when set to 0, all nonvolatile protection bits are locked.
2. Block nonvolatile protection bit: when cleared to 1, the block is unprotected; when set
to 0, the block is protected.
3. Block volatile protection bit: when cleared to 1, the block is unprotected; when set to 0,
the block is protected.
Figure 8: Lock Register Program Flowchart
Start
ENTER LOCK REGISTER COMMAND SET
Address-data (unlock) cycle 1
Address-data (unlock) cycle 2
Address-data cycle 3
PROGRAM LOCK REGISTER
Address-data cycle 1
Address-data cycle 2
Polling algorithm
Yes
Done?
No
Success:
EXIT PROTECTION COMMAND SET
(Returns to device read mode)
Address-data cycle 1
Address-data cycle 2
DQ5 = 1
Yes
No
Failure:
READ/RESET
(Returns device to read mode)
PDF: 09005aef849b4b09
m29ew_256mb_2gb.pdf - Rev. B 8/12 EN
22
Micron Technology, Inc. reserves the right to change products or specifications without notice.
? 2012 Micron Technology, Inc. All rights reserved.
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