参数资料
型号: RC28F00BM29EWHA
厂商: Micron Technology Inc
文件页数: 69/75页
文件大小: 0K
描述: IC FLASH 2GBIT 100NS 64FBGA
标准包装: 184
系列: Axcell™
格式 - 存储器: 闪存
存储器类型: 闪存 - 或非
存储容量: 2G(256M x 8,128M x 16)
速度: 100ns
接口: 并联
电源电压: 2.7 V ~ 3.6 V
工作温度: -40°C ~ 85°C
封装/外壳: 64-LBGA
供应商设备封装: 64-FBGA(11x13)
包装: 托盘

256Mb, 512Mb, 1Gb, 2Gb: 3V Embedded Parallel NOR Flash
Accelerated Program, Data Polling/Toggle AC Characteristics
Accelerated Program, Data Polling/Toggle AC Characteristics
Table 32: Accelerated Program and Data Polling/Data Toggle AC Characteristics
Symbol
Parameter
V PP /WP# rising or falling time
Address setup time to OE# LOW during toggle bit polling
Address hold time from OE# during toggle bit polling
CE# HIGH during toggle bit polling
Output hold time during data and toggle bit polling
Legacy
t ASO
t AHT
t EPH
t OEH
JEDEC
t VHVPP
t AXGL
t GHAX, t EHAX
t EHEL2
t WHGL2,
Min
250
15
0
30
20
Max
Unit
ns
ns
ns
ns
ns
t GHGL2
Program/erase valid to RY/BY# LOW
t BUSY
t WHRL
90
ns
Note:
1. Sampled only; not 100% tested.
Figure 27: Accelerated Program AC Timing
V PP /WP#
V PPH
V IL or V IH
Figure 28: Data Polling AC Timing
t VHVPP
t VHVPP
CE#
OE#
WE#
t CH
t OE
t OEH
t E
t HZ/ t DF
DQ7
DQ[6:0]
Data
Data
DQ7#
Output flag
DQ7#
Output flag
Valid DQ7
Data
Valid
DQ[6:0] Data
t BUSY
RY/BY#
Notes:
1. DQ7 returns a valid data bit when the PROGRAM or ERASE command has completed.
PDF: 09005aef849b4b09
m29ew_256mb_2gb.pdf - Rev. B 8/12 EN
69
Micron Technology, Inc. reserves the right to change products or specifications without notice.
? 2012 Micron Technology, Inc. All rights reserved.
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