- 您现在的位置：买卖IC网 > Datasheet目录354 > RC28F00BM29EWHA (Micron Technology Inc)IC FLASH 2GBIT 100NS 64FBGA Datasheet资料下载
参数资料
| 型号： | RC28F00BM29EWHA |
| 厂商： | Micron Technology Inc |
| 文件页数： | 25/75页 |
| 文件大小： | 0K |
| 描述： | IC FLASH 2GBIT 100NS 64FBGA |
| 标准包装： | 184 |
| 系列： | Axcell™ |
| 格式 - 存储器： | 闪存 |
| 存储器类型： | 闪存 - 或非 |
| 存储容量： | 2G（256M x 8，128M x 16） |
| 速度： | 100ns |
| 接口： | 并联 |
| 电源电压： | 2.7 V ~ 3.6 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 64-LBGA |
| 供应商设备封装： | 64-FBGA（11x13） |
| 包装： | 托盘 |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页当前第25页第26页第27页第28页第29页第30页第31页第32页第33页第34页第35页第36页第37页第38页第39页第40页第41页第42页第43页第44页第45页第46页第47页第48页第49页第50页第51页第52页第53页第54页第55页第56页第57页第58页第59页第60页第61页第62页第63页第64页第65页第66页第67页第68页第69页第70页第71页第72页第73页第74页第75页
256Mb, 512Mb, 1Gb, 2Gb: 3V Embedded Parallel NOR Flash
Standard Command Definitions – Address-Data Cycles
Table 11: Standard Command Definitions – Address-Data Cycles, 8-Bit and 16-Bit (Continued)
Note 1 applies to entire table
Address and Data Cycles
Command and
Bus
1st
2nd
3rd
4th
5th
6th
Code/Subcode
CHIP ERASE (80/10h)
Size
x8
A
AAA
D
AA
A
555
D
55
A
AAA
D
80
A
AAA
D
AA
A
555
D
55
A
AAA
D
10
Notes
x16
555
2AA
555
555
2AA
555
UNLOCK BYPASS
x8
X
80
X
10
5
CHIP ERASE (80/10h)
x16
BLOCK ERASE (80/30h)
x8
AAA
AA
555
55
AAA
80
AAA
AA
555
55
BAd
30
9
x16
555
2AA
555
555
2AA
UNLOCK BYPASS
x8
X
80
BAd
30
5
BLOCK ERASE (80/30h)
x16
ERASE SUSPEND (B0h)
x8
X
B0
x16
ERASE RESUME (30h)
x8
X
30
x16
BLANK CHECK Operations
BLANK CHECK
x8
AAA
AA
555
55
BAd
EB
BAd
76
BAd
00
BAd
00
SETUP (EB/76h)
x16
555
2AA
BLANK CHECK CONFIRM
x8
BAd
29
BAd
Note
2
and READ (29h)
x16
Notes:
2
1. A = Address; D = Data; X = "Don't Care;" BAd = Any address in the block; N = Number of
bytes to be programmed; PA = Program address; PD = Program data; Gray shading = Not
applicable. All values in the table are hexadecimal. Some commands require both a com-
mand code and subcode. For the 2Gb device, the set-up command must be issued for
each selected die.
2. These cells represent READ cycles (versus WRITE cycles for the others).
3. AUTO SELECT enables the device to read the manufacturer code, device code, block pro-
tection status, and extended memory block protection indicator.
4. AUTO SELECT addresses and data are specified in the Electronic Signature table and the
Extended Memory Block Protection table.
5. For any UNLOCK BYPASS ERASE/PROGRAM command, the first two UNLOCK cycles are
unnecessary.
6. BAd must be the same as the address loaded during the WRITE TO BUFFER PROGRAM
3rd and 4th cycles.
7. WRITE TO BUFFER PROGRAM operation: maximum cycles = 261 (x8) and 517 (x16). UN-
LOCK BYPASS WRITE TO BUFFER PROGRAM operation: maximum cycles = 259 (x8), 515
(x16). WRITE TO BUFFER PROGRAM operation: N + 1 = bytes to be programmed; maxi-
mum buffer size = 256 bytes (x8) and 1024 bytes (x16).
8. For x8, A[MAX:7] address pins should remain unchanged while A[6:0] and A-1 pins are
used to select a byte within the N + 1 byte page. For x16, A[MAX:9] address pins should
remain unchanged while A[8:0] pins are used to select a word within the N+1 word
page.
9. BLOCK ERASE address cycles can extend beyond six address-data cycles, depending on
the number of blocks to erase.
PDF: 09005aef849b4b09
m29ew_256mb_2gb.pdf - Rev. B 8/12 EN
25
Micron Technology, Inc. reserves the right to change products or specifications without notice.
? 2012 Micron Technology, Inc. All rights reserved.
相关PDF资料 |
PDF描述 |
|---|---|
| RDK-242 | KIT REF DESIGN VG TOPSWITCH-JX |
| RJCSE538001 | CONN MOD JACK 8P8C SMT R/A |
| RJE031882420 | CONN MOD JACK 8P/8C S-FLANGES |
| RJE051660310 | CONN MOD JACK 6P/6C UNSHIELDED |
| RJE051880110 | CONN MOD JACK 8/8 R/A UNSHIELDED |
相关代理商/技术参数 |
参数描述 |
|---|---|
| RC28F128J3A_13 | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:Intel StrataFlash?? Memory |
| RC28F128J3A-110 | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:Intel StrataFlash Memory (J3) |
| RC28F128J3A-115 | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:Intel StrataFlash Memory (J3) |
| RC28F128J3A-120 | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:Intel StrataFlash Memory (J3) |
| RC28F128J3A-125 | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:Intel StrataFlash Memory (J3) |
发布紧急采购，3分钟左右您将得到回复。