参数资料
型号: RC28F00BM29EWHA
厂商: Micron Technology Inc
文件页数: 28/75页
文件大小: 0K
描述: IC FLASH 2GBIT 100NS 64FBGA
标准包装: 184
系列: Axcell™
格式 - 存储器: 闪存
存储器类型: 闪存 - 或非
存储容量: 2G(256M x 8,128M x 16)
速度: 100ns
接口: 并联
电源电压: 2.7 V ~ 3.6 V
工作温度: -40°C ~ 85°C
封装/外壳: 64-LBGA
供应商设备封装: 64-FBGA(11x13)
包装: 托盘

256Mb, 512Mb, 1Gb, 2Gb: 3V Embedded Parallel NOR Flash
Bypass Operations
Bypass Operations
UNLOCK BYPASS Command
The UNLOCK BYPASS (20h) command is used to place the device in unlock bypass
mode. Three bus WRITE operations are required to issue the UNLOCK BYPASS com-
mand.
When the device enters unlock bypass mode, the two initial UNLOCK cycles required
for a standard PROGRAM or ERASE operation are not needed, thus enabling faster total
program or erase time.
The UNLOCK BYPASS command is used in conjunction with UNLOCK BYPASS PRO-
GRAM or UNLOCK BYPASS ERASE commands to program or erase the device faster
than with standard PROGRAM or ERASE commands. When the cycle time to the device
is long, considerable time savings can be gained by using these commands. When in
unlock bypass mode, only the following commands are valid:
? The UNLOCK BYPASS PROGRAM command can be issued to program addresses
within the device.
? The UNLOCK BYPASS BLOCK ERASE command can then be issued to erase one or
more memory blocks.
? The UNLOCK BYPASS CHIP ERASE command can be issued to erase the whole mem-
ory array.
? The UNLOCK BYPASS WRITE TO BUFFER PROGRAM command can be issued to
speed up the programming operation.
? The UNLOCK BYPASS RESET command can be issued to return the device to read
mode.
In unlock bypass mode, the device can be read as if in read mode.
In addition to the UNLOCK BYPASS command, when V PP /WP# is raised to V PPH , the de-
vice automatically enters unlock bypass mode. When V PP /WP# returns to V IH or V IL , the
device is no longer in unlock bypass mode and normal operation resumes. The transi-
tions from V IH to V PPH and from V PPH to V IH must be slower than t VHVPP (see the Accel-
erated Program, Data Polling/Toggle AC Characteristics).
Note: Micron recommends the user enter and exit unlock bypass mode using ENTER
UNLOCK BYPASS and UNLOCK BYPASS RESET commands rather than raising V PP /WP#
to V PPH . V PP /WP# should never be raised to V PPH from any mode except read mode; oth-
erwise, the device may be left in an indeterminate state.
UNLOCK BYPASS RESET Command
The UNLOCK BYPASS RESET (90/00h) command is used to return to read/reset mode
from unlock bypass mode. Two bus WRITE operations are required to issue the UN-
LOCK BYPASS RESET command. The READ/RESET command does not exit from un-
lock bypass mode.
PDF: 09005aef849b4b09
m29ew_256mb_2gb.pdf - Rev. B 8/12 EN
28
Micron Technology, Inc. reserves the right to change products or specifications without notice.
? 2012 Micron Technology, Inc. All rights reserved.
相关PDF资料
PDF描述
RDK-242 KIT REF DESIGN VG TOPSWITCH-JX
RJCSE538001 CONN MOD JACK 8P8C SMT R/A
RJE031882420 CONN MOD JACK 8P/8C S-FLANGES
RJE051660310 CONN MOD JACK 6P/6C UNSHIELDED
RJE051880110 CONN MOD JACK 8/8 R/A UNSHIELDED
相关代理商/技术参数
参数描述
RC28F128J3A_13 制造商:INTEL 制造商全称:Intel Corporation 功能描述:Intel StrataFlash?? Memory
RC28F128J3A-110 制造商:INTEL 制造商全称:Intel Corporation 功能描述:Intel StrataFlash Memory (J3)
RC28F128J3A-115 制造商:INTEL 制造商全称:Intel Corporation 功能描述:Intel StrataFlash Memory (J3)
RC28F128J3A-120 制造商:INTEL 制造商全称:Intel Corporation 功能描述:Intel StrataFlash Memory (J3)
RC28F128J3A-125 制造商:INTEL 制造商全称:Intel Corporation 功能描述:Intel StrataFlash Memory (J3)