参数资料
型号: RC28F00BM29EWHA
厂商: Micron Technology Inc
文件页数: 71/75页
文件大小: 0K
描述: IC FLASH 2GBIT 100NS 64FBGA
标准包装: 184
系列: Axcell™
格式 - 存储器: 闪存
存储器类型: 闪存 - 或非
存储容量: 2G(256M x 8,128M x 16)
速度: 100ns
接口: 并联
电源电压: 2.7 V ~ 3.6 V
工作温度: -40°C ~ 85°C
封装/外壳: 64-LBGA
供应商设备封装: 64-FBGA(11x13)
包装: 托盘

256Mb, 512Mb, 1Gb, 2Gb: 3V Embedded Parallel NOR Flash
Program/Erase Characteristics
Program/Erase Characteristics
Table 33: Program/Erase Characteristics
Notes 1 and 2 apply to the entire table.
Buffer
Parameter
Block erase (128KB)
Erase suspend latency time
Block erase timeout
Size
Byte
Word
Min
50
Typ
0.8
27
Max
4
32
Unit
s
μs
μs
Notes
Byte program
Word program
Single-byte program
Byte write to buffer program
Effective write to buffer
program per byte
Single-word program
Word write to buffer program
Effective write to buffer
program per word
64
128
256
64
128
256
32
64
128
256
512
32
64
128
256
512
64
128
256
1
1
1
32
64
128
256
512
1
1
1
1
1
210
270
310
375
4.22
2.42
1.46
210
270
310
375
505
900
8.44
4.84
2.93
1.97
1.76
456
716
900
1140
11.2
7
4.45
456
716
900
1140
1690
3016
22.4
14.1
8.9
6.6
5.89
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
Program suspend latency time
Blank check
PROGRAM/ERASE cycles (per block)
100,000
27
3.2
32
μs
ms
cycles
Erase to suspend
500
μs
3
Notes:
1. Typical values measured at room temperature and nominal voltages.
2. Typical and maximum values are sampled, but not 100% tested.
3. Erase to suspend is the typical time between an initial BLOCK ERASE or ERASE RESUME
command and a subsequent ERASE SUSPEND command. Violating the specification re-
peatedly during any particular block erase may cause erase failures.
PDF: 09005aef849b4b09
m29ew_256mb_2gb.pdf - Rev. B 8/12 EN
71
Micron Technology, Inc. reserves the right to change products or specifications without notice.
? 2012 Micron Technology, Inc. All rights reserved.
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