收藏本站
参数资料
型号： S71PL129JC0BFW9Z2
厂商： SPANSION LLC
元件分类： 存储器
英文描述： Stacked Multi-Chip Product (MCP) Flash Memory
中文描述： SPECIALTY MEMORY CIRCUIT, PBGA64
封装： 8 X 11.60 MM, 1.20 MM HEIGHT, LEAD FREE, FBGA-64
文件页数： 110/153页
文件大小： 3651K
代理商： S71PL129JC0BFW9Z2
4
S71PL129JC0/S71PL129JB0/S71PL129JA0
S71PL129Jxx_00_A8 October 28, 2005
Advance
Info rmation
RY/BY#: Ready/Busy# .......................................................................................58
DQ6: Toggle Bit I ............................................................................................... 58
Figure 7. Toggle Bit Algorithm.............................................. 60
DQ2: Toggle Bit II .............................................................................................. 60
Reading Toggle Bits DQ6/DQ2 ..................................................................... 60
DQ5: Exceeded Timing Limits ........................................................................ 61
DQ3: Sector Erase Timer ................................................................................. 61
Table 14. Write Operation Status ......................................... 62
Absolute Maximum Ratings . . . . . . . . . . . . . . . . . .63
Figure 8. Maximum Overshoot Waveforms............................. 63
Operating Ranges . . . . . . . . . . . . . . . . . . . . . . . . . .64
Industrial (I) Devices ......................................................................................... 64
Extended (E) Devices ........................................................................................ 64
Supply Voltages ................................................................................................... 64
DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . .65
Table 15. CMOS Compatible ................................................ 65
AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . .66
Test Conditions .................................................................................................. 66
Figure 9. Test Setups......................................................... 66
Table 16. Test Specifications ............................................... 66
Switching Waveforms ....................................................................................... 66
Table 17. Key to Switching Waveforms ................................. 66
Figure 10. Input Waveforms and Measurement Levels............. 67
VCC RampRate ...................................................................................................67
Read Operations .................................................................................................67
Table 18. Read-Only Operations .......................................... 67
Figure 11. Read Operation Timings....................................... 68
Figure 12. Page Read Operation Timings ............................... 68
Reset ...................................................................................................................... 69
Table 19. Hardware Reset (RESET#) .................................... 69
Figure 13. Reset Timings..................................................... 69
Erase/Program Operations ............................................................................. 70
Table 20. Erase and Program Operations .............................. 70
Timing Diagrams ...................................................................................................71
Figure 14. Program Operation Timings .................................. 71
Figure 15. Accelerated Program Timing Diagram .................... 71
Figure 16. Chip/Sector Erase Operation Timings..................... 72
Figure 17. Back-to-back Read/Write Cycle Timings ................. 73
Figure 18. Data# Polling Timings
(During Embedded Algorithms) ............................................ 73
Figure 19. Toggle Bit Timings (During Embedded Algorithms) .. 74
Figure 20. DQ2 vs. DQ6 ...................................................... 74
Protect/Unprotect . . . . . . . . . . . . . . . . . . . . . . . . 75
Table 21. Temporary Sector Unprotect ................................. 75
Figure 21. Temporary Sector Unprotect Timing Diagram.......... 75
Figure 22. Sector/Sector Block Protect and Unprotect Timing
Diagram............................................................................ 76
Controlled Erase Operations ..........................................................................77
Table 22. Alternate CE# Controlled Erase and
Program Operations ........................................................... 77
Table 23. Alternate CE# Controlled Write (Erase/Program)
Operation Timings ............................................................. 78
Table 24. CE1#/CE2# Timing ............................................. 78
Figure 23. Timing Diagram for Alternating Between CE1# and CE2#
Control ............................................................................. 79
Table 25. Erase And Programming Performance .................... 79
BGA Pin Capacitance . . . . . . . . . . . . . . . . . . . . . . 79
pSRAM Type 6
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80
Pin Description . . . . . . . . . . . . . . . . . . . . . . . . . . . 80
Functional Description . . . . . . . . . . . . . . . . . . . . . 81
Absolute Maximum Ratings . . . . . . . . . . . . . . . . 81
AC Characteristics and Operating Conditions . 82
AC Test Conditions . . . . . . . . . . . . . . . . . . . . . . . 83
Timing Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . .84
Read Timings ........................................................................................................84
Figure 24. Read Cycle ........................................................ 84
Figure 25. Page Read Cycle (8 Words Access) ....................... 85
Write Timings ......................................................................................................86
Figure 26. Write Cycle #1 (WE# Controlled) (See Note 8)....... 86
Figure 27. Write Cycle #2 (CE# Controlled) (See Note 8) ....... 87
Deep Power-down Timing ..............................................................................87
Figure 28. Deep Power Down Timing .................................... 87
Power-on Timing ................................................................................................87
Figure 29. Power-on Timing ................................................ 87
Provisions of Address Skew ............................................................................88
Read ....................................................................................................................88
Figure 30. Read................................................................. 88
Write ..................................................................................................................88
Figure 31. Write ................................................................ 88
pSRAM Type 1
Functional Description . . . . . . . . . . . . . . . . . . . . . 89
Absolute Maximum Ratings . . . . . . . . . . . . . . . . 89
DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . .90
Timing Test Conditions . . . . . . . . . . . . . . . . . . . . 95
Output Load Circuit ..........................................................................................96
Figure 32. Output Load Circuit............................................. 96
Power Up Sequence . . . . . . . . . . . . . . . . . . . . . . . 96
AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . 97
Timing Diagrams . . . . . . . . . . . . . . . . . . . . . . . . 108
Read Cycle .......................................................................................................... 108
Figure 33. Timing of Read Cycle
(CE# = OE# = VIL, WE# = ZZ# = VIH).............................. 108
Figure 34. Timing Waveform of Read Cycle
(WE# = ZZ# = VIH)......................................................... 109
Figure 35. Timing Waveform of Page Mode Read Cycle
(WE# = ZZ# = VIH)......................................................... 110
Write Cycle ...........................................................................................................111
Figure 36. Timing Waveform of Write Cycle
(WE# Control, ZZ# = VIH)................................................ 111
Figure 37. Timing Waveform of Write Cycle
(CE# Control, ZZ# = VIH)................................................. 111
Figure 38. Timing Waveform of Page Mode Write Cycle
(ZZ# = VIH) ................................................................... 112
Partial Array Self Refresh (PAR) ....................................................................112
Temperature Compensated Refresh (for 64Mb) .....................................113
Deep Sleep Mode ...............................................................................................113
Reduced Memory Size (for 32M and 16M) ..................................................113
Other Mode Register Settings (for 64M) ....................................................113
Figure 39. Mode Register.................................................. 114
Figure 40. Mode Register Update Timings (UB#, LB#, OE# are
Don’t Care)..................................................................... 114
Figure 41. Deep Sleep Mode - Entry/Exit Timings (for 64M)... 115
Figure 42. Deep Sleep Mode - Entry/Exit Timings
(for 32M and 16M)........................................................... 115
Type 2 pSRAM
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 119
Product Information . . . . . . . . . . . . . . . . . . . . . . 119
Pin Description . . . . . . . . . . . . . . . . . . . . . . . . . . 120
Power Up Sequence . . . . . . . . . . . . . . . . . . . . . . 120
相关PDF资料
PDF描述
S71PL129NC0HFW4U3 SPECIALTY MEMORY CIRCUIT, PBGA64
S71PL191HB0BFI100 SPECIALTY MEMORY CIRCUIT, PBGA73
S71VS128RC0ZHK203 SPECIALTY MEMORY CIRCUIT, PBGA56
S71VS128RC0ZHK2L2 SPECIALTY MEMORY CIRCUIT, PBGA56
S71WS512ND0BAWEH SPECIALTY MEMORY CIRCUIT, PBGA84
相关代理商/技术参数
参数描述
S71PL129JC0BFW9Z3 制造商:SPANSION 制造商全称:SPANSION 功能描述:Stacked Multi-Chip Product (MCP) Flash Memory
S71PL129N 制造商:SPANSION 制造商全称:SPANSION 功能描述:256/128/128兆位(16/8/8米x16位元)的CMOS 3.0电压只有同时读/写,页面模式闪存
S71PL129NB0 制造商:SPANSION 制造商全称:SPANSION 功能描述:MirrorBit MCPs
S71PL129NB0HAW5B0 制造商:SPANSION 制造商全称:SPANSION 功能描述:MirrorBit MCPs
S71PL129NB0HAW5B2 制造商:SPANSION 制造商全称:SPANSION 功能描述:MirrorBit MCPs
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*