参数资料
型号: S71PL129JC0BFW9Z2
厂商: SPANSION LLC
元件分类: 存储器
英文描述: Stacked Multi-Chip Product (MCP) Flash Memory
中文描述: SPECIALTY MEMORY CIRCUIT, PBGA64
封装: 8 X 11.60 MM, 1.20 MM HEIGHT, LEAD FREE, FBGA-64
文件页数: 58/153页
文件大小: 3651K
代理商: S71PL129JC0BFW9Z2
148
S71PL129JC0/S71PL129JB0/S71PL129JA0
S71PL129Jxx_00_A8 October 28, 2005
Advance
Info rmation
Read/Write Timings
Notes:
1. The tC2LH specifies after VDD reaches specified minimum level.
2. For 32M only: The minimum and maximum VDD transition time from 0 V to specified VDD minimum are 30 s and 50 ms respectively.
Figure 69. Power-up Timing #1
Notes:
1. The tCHH specifies after VDD reaches specified minimum level and applicable to both CE1# and CE2.
2. For 32M only: The minimum and maximum VDD transition time from 0 V to specified VDD minimum are 30 s and 50 ms respectively. If
transition time of VDD (from 0 V to VDD min.) is longer than 50 ms, POWER-UP Timing #1 must be applied.
Figure 70. Power-up Timing #2
Note: This Power Down mode can be also used as a reset timing if POWER-UP timing above could not be satisfied and
Power-Down program was not performed prior to this reset.
Figure 71. Power Down Entry and Exit Timing
tC2LH
CE1#
VDD
VDD min
0V
CE2
tCHH
tCHS
CE1#
VDD
VDD min
0V
CE2
tCHH
tCSP
CE1#
Power Down Entry
CE2
tC2LP
tCHH (tCHHP)
Power Down Mode
Power Down Exit
tCHS
DQ
High-Z
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