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参数资料
型号： S71PL129JC0BFW9Z2
厂商： SPANSION LLC
元件分类： 存储器
英文描述： Stacked Multi-Chip Product (MCP) Flash Memory
中文描述： SPECIALTY MEMORY CIRCUIT, PBGA64
封装： 8 X 11.60 MM, 1.20 MM HEIGHT, LEAD FREE, FBGA-64
文件页数： 47/153页
文件大小： 3651K
代理商： S71PL129JC0BFW9Z2
138
S71PL129JC0/S71PL129JB0/S71PL129JA0
S71PL129Jxx_00_A8 October 28, 2005
Advance
Info rmation
AC Characteristics
Write Operation
Notes:
1. Maximum value is applicable if CE1# is kept at Low without any address change. If the relaxation is needed by system operation, please
contact local Spansion representative for the relaxation of 1s limitation.
2. Minimum value must be equal or greater than the sum of write pulse (tCW, tWP or tBW) and write recovery time (tWR).
3. Write pulse is defined from High to Low transition of CE1#, WE#, or LB#/UB#, whichever occurs last.
4. Applicable for byte mask only. Byte mask setup time is defined to the High to Low transition of CE1# or WE# whichever
occurs last.
5. Applicable for byte mask only. Byte mask hold time is defined from the Low to High transition of CE1# or WE# whichever
occurs first.
6. Write recovery is defined from Low to High transition of CE1#, WE#, or LB#/UB#, whichever occurs first.
7. tWPH minimum is absolute minimum value for device to detect High level. And it is defined at minimum VIH level.
8. If OE# is Low after minimum tOHCL, read cycle is initiated. In other words, OE# must be brought to High within 5ns after
CE1# is brought to Low. Once read cycle is initiated, new write pulse should be input after minimum tRC is met.
9. If OE# is Low after new address input, read cycle is initiated. In other word, OE# must be brought to High at the same time
or before new address valid. Once read cycle is initiated, new write pulse should be input after minimum tRC is met and data
bus is in High-Z.
Parameter
Symbol
16M
32M
64M
Unit
Notes
Min.
Max.
Min.
Max.
Min.
Max.
Write Cycle Time
tWC
70
1000
65
1000
65
1000
ns
1,2
Address Setup Time
tAS
0—0—0—
ns
3
CE1# Write Pulse Width
tCW
45
—
40
—
40
—
ns
3
WE# Write Pulse Width
tWP
45
—
40
—
40
—
ns
3
LB#/UB# Write Pulse Width
tBW
45
—
40
—
40
—
ns
3
LB#/UB# Byte Mask Setup Time
tBS
-5
—
–5
—
–5
—
ns
4
LB#/UB# Byte Mask Hold Time
tBH
-5
—
–5
—
–5
—
ns
5
Write Recovery Time
tWR
0—0—0—
ns
6
CE1# High Pulse Width
tCP
10
—
12
—
12
—
ns
WE# High Pulse Width
tWHP
7.5
1000
7.5
1000
7.5
1000
ns
7
LB#/UB# High Pulse Width
tBHP
10
1000
12
1000
12
1000
ns
Data Setup Time
tDS
15
—
12
—
12
—
ns
Data Hold Time
tDH
0—0—0—
ns
OE# High to CE1# Low Setup Time for Write
tOHCL
-5
—
–5
—
–5
—
ns
8
OE# High to Address Setup Time for Write
tOES
0—0—0—
ns
9
LB# and UB# Write Pulse Overlap
tBWO
30
—
30
—
30
—
ns
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相关代理商/技术参数
参数描述
S71PL129JC0BFW9Z3 制造商:SPANSION 制造商全称:SPANSION 功能描述:Stacked Multi-Chip Product (MCP) Flash Memory
S71PL129N 制造商:SPANSION 制造商全称:SPANSION 功能描述:256/128/128兆位(16/8/8米x16位元)的CMOS 3.0电压只有同时读/写,页面模式闪存
S71PL129NB0 制造商:SPANSION 制造商全称:SPANSION 功能描述:MirrorBit MCPs
S71PL129NB0HAW5B0 制造商:SPANSION 制造商全称:SPANSION 功能描述:MirrorBit MCPs
S71PL129NB0HAW5B2 制造商:SPANSION 制造商全称:SPANSION 功能描述:MirrorBit MCPs
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