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参数资料
| 型号： | SDED7-256M-N9T |
| 厂商： | SANDISK CORP |
| 元件分类： | 存储控制器/管理单元 |
| 英文描述： | FLASH MEMORY DRIVE CONTROLLER, PBGA115 |
| 封装： | 12 X 9 MM, 1.20 MM HEIGHT, FBGA-115 |
| 文件页数： | 48/87页 |
| 文件大小： | 1675K |
| 代理商： | SDED7-256M-N9T |
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Rev. 1.2
Design Considerations
mDOC H3 EFD Featuring Embedded TrueFFS Data Sheet
52
92-DS-1205-10
7. The series inductance of the capacitors marked as required should be less than 15nH.
8. For this configuration, we recommend that the 0.1uF capacitor will be located close
to the VCC ball and the 10nF capacitor will be located close to the VCC2 ball. If this
placement is not possible then both capacitors should be located as close as possible
to the VCC ball. The 10nF capacitor is only recommended in order to reduce high
frequency noise.
9. For compatibility with next generation mDOC H3 devices we recommend adding an
additional 0.1uF capacitor in parallel with the required 1uF capacitor. For designs that
will only use the current mDOC H3 device only the 1uF capacitor is required.
10. In this configuration the internal charge pump is disabled. Installing a 33nF or 47nF
capacitor will have no impact on the device.
11. In this configuration the voltage regulator is disabled and no capacitors are required
on this ball. Installing a capacitor on this ball will have no impact on the device.
12. In this configuration the internal charge pump is enabled. The current mDOC H3
device requires at least a 1uF capacitor on VCC2 but it can also be operated with
1.5uF capacitor. However, for SDED5-AAAB-CCC devices, a 1.5uF will be required.
The 0.1uF capacitor is only recommended in order to reduce high frequency noise.
13. This capacitor is critical for the operation of the internal charge pump. For the current
mDOC H3 device a 33nF capacitor is required but it can also be operated with a 47nF
capacitor. However, for for SDED5-AAAB-CCC devices, a 47nF capacitor will be
required.
14. For the current mDOC H3 device a 0.1uF capacitor is required but it can also be
operated with a 0.33uF capacitor. However, f for SDED5-AAAB-CCC devices, a
0.33uF capacitor will be required. This applies only to 1.8V Core and I/O
configuration.
15. In case there are multiple balls available for a power supply then the recommended
capacitors do not need to be duplicated for all balls but can be placed near one or
more balls.
16. For systems that use a cascaded configuration, each mDOC H3 device must have its
own set of required capacitors. Required capacitors cannot be shared between
devices. Capacitors that are recommended can be shared between devices, however
their effectiveness may be reduced. Careful analysis of the potential noise on the
power supply pins should be conducted before deciding to share capacitors and
reduce the total number of recommended capacitors.
17. The capacitors must be placed as close as possible to the package leads. Below are
some drawings that depict the various power connectivity options. All options are
valid for both MUX and DEMUX configurations.
18. BUSY#, DMARQ# and IRQ# should not be pulled up to any voltage higher than
VCCQ.
相关PDF资料 |
PDF描述 |
|---|---|
| SDED7-256M-N9Y | FLASH MEMORY DRIVE CONTROLLER, PBGA115 |
| SPMC68336AVFT20 | 32-BIT, MROM, 20.97 MHz, MICROCONTROLLER, PQFP160 |
| SPMC68336GCFT20 | 32-BIT, MROM, 20.97 MHz, MICROCONTROLLER, PQFP160 |
| SC104002VPVR2 | 16-BIT, FLASH, 40 MHz, MICROCONTROLLER, PQFP112 |
| S9S12XF512J0MLH | MICROCONTROLLER, QFP64 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SDED7-256M-N9Y | 功能描述:IC MDOC H3 256MB FBGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:150 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:4K (2 x 256 x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:2.5 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-VFDFN 裸露焊盘 供应商设备封装:8-DFN（2x3） 包装:管件 产品目录页面:1445 (CN2011-ZH PDF) |
| SDED7-512M-NAT | 功能描述:IC MDOC H3 512MB FBGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:150 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:4K (2 x 256 x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:2.5 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-VFDFN 裸露焊盘 供应商设备封装:8-DFN（2x3） 包装:管件 产品目录页面:1445 (CN2011-ZH PDF) |
| SDED7-512M-NAY | 功能描述:IC MDOC H3 512MB FBGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:150 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:4K (2 x 256 x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:2.5 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-VFDFN 裸露焊盘 供应商设备封装:8-DFN（2x3） 包装:管件 产品目录页面:1445 (CN2011-ZH PDF) |
| SDEG-15P | 制造商:HRS 制造商全称:HRS 功能描述:STRAIGHT/METAL PCB D-SUB |
| SDEG-15P05 | 制造商:HRS 制造商全称:HRS 功能描述:STRAIGHT/METAL PCB D-SUB |
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