参数资料
型号: W25Q64FVSSIG
厂商: Winbond Electronics
文件页数: 53/89页
文件大小: 0K
描述: IC SPI FLASH 64MBIT 8SOIC
标准包装: 90
系列: SpiFlash®
格式 - 存储器: 闪存
存储器类型: FLASH
存储容量: 64M(8M x 8)
速度: 80MHz
接口: SPI 串行
电源电压: 2.7 V ~ 3.6 V
工作温度: -40°C ~ 85°C
封装/外壳: 8-SOIC(0.209",5.30mm 宽)
供应商设备封装: 8-SOIC
包装: 管件
W25Q64FV
6.2.27
Erase / Program Resume (7Ah)
The Erase/Program Resume instruction “7Ah” must be written to resume the Sector or Block Erase
operation or the Page Program operation after an Erase/Program Suspend. The Resume instruction
“7Ah” will be accepted by t he device only if the SUS bit in the Status Register equals to 1 and the BUSY
bit equals to 0. After issued the SUS bit will be cleared from 1 to 0 immediately, the BUSY bit will be set
from 0 to 1 within 200ns and the Sector or Block will complete the erase operation or the page will
complete the program operation. If the SUS bit equals to 0 or the BUSY bit equals to 1, the Resume
instruction “7Ah” will be ignored by the device. The Erase/Program Resume instruction sequence is
shown in Figure 26a & 26b.
Resume instruction is ignored if the previous Erase/Program Suspend operation was interrupted by
unexpected power off. It is also required that a subsequent Erase/Program Suspend instruction not to be
issued within a minimum of time of “t SUS ” following a pre vious Resume instruction.
/CS
Mode 3
0
1
2
3
4
5
6
7
Mode 3
CLK
Mode 0
Mode 0
Instruction (7Ah)
DI
(IO 0 )
Resume previously
suspended Program or
Erase
Figure 26a. Erase/Program Resume Instruction (SPI Mode)
/CS
CLK
Mode 3
Mode 0
0
1
Mode 3
Mode 0
In structio n
7Ah
IO 0
IO 1
IO 2
IO 3
Resume previously
suspended Program or
Erase
Figure 26b. Erase/Program Resume Instruction (QPI Mode)
- 53 -
Publication Release Date:
October 07, 2013
Revision L
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