参数资料
型号: M68HC705UGANG
厂商: 飞思卡尔半导体(中国)有限公司
英文描述: High-density complementary metal oxide semiconductor (HCMOS) microcontroller unit
中文描述: 高密度互补金属氧化物半导体(HCMOS)微控制器
文件页数: 94/112页
文件大小: 809K
代理商: M68HC705UGANG
12-2
MC68HC05BD3
ELECTRICAL SPECIFICATIONS
12
12.3
DC Electrical Characteristics
Table 12-1
DC Electrical Characteristics for MC68HC05BD3
(V
DD
=5.0Vdc
±
10%, V
SS
=0Vdc, temperature range=0 to 70
°
C)
CHARACTERISTICS
Output voltage
I
LOAD
= –10
μ
A
I
LOAD
= +10
μ
A
Output high voltage (I
LOAD
=–5mA)
PA0-PA7, PB0-PB1, PC6-PC7, PD0-PD1
Output low voltage (I
LOAD
=+5mA)
PA0-PA7, PB0-PB5, PC0-PC7, PD0-PD1,
PWM0-PWM7
Input high voltage
PA0-PA7, PB0-PB5, PC0-PC7, PD0-PD1,
IRQ, RESET, EXTAL
VSYNC, HSYNC (TTL level)
Input low voltage
PA0-PA7, PB0-PB5, PC0-PC7, PD0-PD1,
IRQ, RESET, EXTAL
VSYNC, HSYNC (TTL level)
Supply current:
Run
Wait
I/O ports high-Z leakage current
PA0-PA7, PB0-PB5, PC0-PC7, PD0-PD1,
PWM0-PWM7
Input current
IRQ, RESET, EXTAL, VSYNC, HSYNC
Capacitance
ports (as input or output), RESET, IRQ,
EXTAL, XTAL, HSYNC, VSYNC
Notes:
(1) All values shown reflect average measurements.
SYMBOL
MINIMUM
TYPICAL
MAXIMUM
UNIT
V
OH
V
OL
V
DD
-0.1
0.1
V
V
V
OH
V
DD
-0.8
V
V
OL
0.4
V
V
IH
0.7xV
DD
2.0
V
DD
V
DD
V
V
IL
V
SS
V
SS
0.2xV
DD
0.8
V
I
DD
4.5
0.73
20
8
mA
mA
I
IL
±
10
μ
A
I
IN
1
μ
A
C
OUT
C
IN
12
8
pF
pF
(2) Typical values at midpoint of voltage range, 25
°
C only.
(3) Wait I
DD
: only timer system and SSP is active.
(4) Run (operating) I
DD
, Wait I
DD
: measured using external square wave clock source to EXTAL (f
OSC
=4.2MHz),
all inputs 0.2 Vdc from rail; no dc loads, less than 50pF on all outputs, C
L
=20pF on EXTAL.
(5) Wait I
DD
: all ports configured as inputs, V
IL
=0.2 Vdc, V
IH
=V
DD
– 0.2 Vdc.
(6) Wait I
DD
is affected linearly by the EXTAL capacitance.
TPG
92
F
Freescale Semiconductor, Inc.
For More Information On This Product,
Go to: www.freescale.com
n
.
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