参数资料
型号: MCR705JP7CDWE
厂商: Freescale Semiconductor
文件页数: 28/164页
文件大小: 0K
描述: MCU 8BIT 224B RAM 28-SOIC
标准包装: 26
系列: HC05
核心处理器: HC05
芯体尺寸: 8-位
速度: 2.1MHz
连通性: SIO
外围设备: POR,温度传感器,WDT
输入/输出数: 22
程序存储器容量: 6KB(6K x 8)
程序存储器类型: OTP
RAM 容量: 224 x 8
电压 - 电源 (Vcc/Vdd): 2.7 V ~ 5.5 V
数据转换器: A/D 4x12b
振荡器型: 内部
工作温度: -40°C ~ 85°C
封装/外壳: 28-SOIC(0.295",7.50mm 宽)
包装: 管件
EPROM Erasing
MC68HC705JJ7 MC68HC705JP7 Advance Information Data Sheet, Rev. 4.1
Freescale Semiconductor
123
13.3.1 MOR Programming
The contents of the MOR should be programmed using the programmer board. To program any bits in
the MOR, the desired bit states must be written to the MOR address and then the MPGM bit in the EPROG
register must be used. The following sequence will program the MOR:
1.
Write the desired data to the MOR location ($1FF1).
2.
Apply the programming voltage to the IRQ/VPP pin.
3.
Set the MPGM bit in the EPROG.
4.
Wait for the programming time, tMPGM.
5.
Clear the MPGM bit in the EPROG.
6.
Remove the programming voltage from the IRQ/VPP pin.
Once the MOR bits have been programmed, some of the options may experience glitches in operation
after removal of the programming voltage. It is recommended that the part be reset before trying to verify
the contents of the user EPROM or the MOR itself.
NOTE
The contents of the EPROM or the MOR cannot be accessed if the
EPMSEC bit in the COPR register has been set.
13.3.2 EPMSEC Programming
The EPMSEC bit is programmable. To program the EPMSEC bit, the desired state must be written to the
COP address and then the MPGM bit in the EPROG register must be used. The following sequence will
program the EPMSEC bit:
1.
Write the desired data to bit 7 of the COPR location ($1FF0).
2.
Apply the programming voltage to the IRQ/VPP pin.
3.
Set the MPGM bit in the EPROG.
4.
Wait for the programming time, tMPGM.
5.
Clear the MPGM bit in the EPROG.
6.
Remove the programming voltage from the IRQ/VPP pin.
Once the EPMSEC bit has been programmed to a logic 1, access to the contents of the EPROM and MOR
in the expanded non-user modes will be denied. It is therefore recommended that the user EPROM and
MOR in the part first be programmed and fully verified before setting the EPMSEC bit.
13.4 EPROM Erasing
MCUs with windowed packages permit EPROM erasing with ultraviolet light. Erase the EPROM by
exposing it to 15 Ws/cm2 of ultraviolet light with a wavelength of 2537 angstroms. Position the ultraviolet
light source 1 inch from the window. Do not use a shortwave filter. The erased state of an EPROM bit is
a logic 0.
NOTE
Unlike many commercial EPROMs, an erased EPROM byte in the MCU will
read as $00. All unused locations should be programmed as 0s.
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