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参数资料
| 型号： | MT45W2MV16BAFB-706LIT |
| 元件分类： | SRAM |
| 英文描述： | 2M X 16 PSEUDO STATIC RAM, 70 ns, PBGA54 |
| 封装： | FBGA-54 |
| 文件页数： | 11/55页 |
| 文件大小： | 816K |
| 代理商： | MT45W2MV16BAFB-706LIT |
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2 MEG x 16
ASYNC/PAGE/BURST CellularRAM MEMORY
ADVANCE
09005aef80ec6f63
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Burst CellularRAM_32.fm - Rev. A 2/18/04 EN
19
2004 Micron Technology, Inc. All Rights Reserved.
WAIT Configuration (BCR[8])
Default = WAIT Transitions One Clock
Before Data Valid/Invalid
The WAIT configuration bit is used to determine
when WAIT transitions between the asserted and the
de-asserted state with respect to valid data presented on
the data bus. The memory controller will use the WAIT
signal to coordinate data transfer during synchronous
READ and WRITE operations. When BCR[8] = 0, data
will be valid or invalid on the clock edge immediately
after WAIT transitions to the de-asserted or asserted
WAIT signal transitions one clock period prior to the
data bus going valid or invalid (Figures 17 and 16).
WAIT Polarity (BCR[10])
Default = WAIT Active HIGH
The WAIT polarity bit indicates whether an asserted
WAIT output should be HIGH or LOW. This bit will
determine whether the WAIT signal requires a pull-up
or pull-down resistor to maintain the de-asserted
state.
Figure 16: WAIT Configuration (BCR[8] = 0)
NOTE:
1. Note: Data valid/invalid immediately after WAIT
transitions (BCR[8] = 0). See Figure 18.
Figure 17: WAIT Configuration (BCR[8] = 1)
NOTE:
1. Note: Valid/invalid data delayed for one clock after
WAIT transitions (BCR[8] = 1). See Figure 18.
Figure 18: WAIT Configuration During Burst Operation1
NOTE:
1. Non-default BCR setting: WAIT active LOW.
WAIT
DQ[15:0]
CLK
Data[0]
Data[1]
Data immediately valid (or invalid)
High-Z
WAIT
D[15:0]
CLK
Data[0]
Data valid (or invalid) after one clock delay
High-Z
WAIT
DQ[15:0]
CLK
D[0]
D[1]
BCR[8] = 0
DATA VALID IN CURRENT CYCLE
BCR[8] = 1
DATA VALID IN NEXT CYCLE
DON’T CARE
D[2]
D[3]
D[4]
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MT45W2MV16PFA-70 WT | 制造商:Micron Technology Inc 功能描述:2MX16 PSRAM PLASTIC WIRELESS TEMP FBGA 1.8V ASYNCH PSEUDO ST - Trays |
| MT45W2MW16BABB-706 L WT | 功能描述:IC PSRAM 32MBIT 70NS 54VFBGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:378 系列:- 格式 - 存储器:闪存 存储器类型:FLASH 存储容量:8M（1M x 8，512K x 16） 速度:110ns 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-CBGA 供应商设备封装:48-CBGA（7x7） 包装:托盘 |
| MT45W2MW16BABB-706 L WT TR | 制造商:Micron Technology Inc 功能描述:PSRAM ASYNC 1 32MBIT 2MX16 70NS 54VFBGA - Tape and Reel |
| MT45W2MW16BABB-706 WT | 制造商:Micron Technology Inc 功能描述:PSRAM Async 1 32M-Bit 2M x 16 70ns 54-Pin VFBGA Tray 制造商:Micron Technology Inc 功能描述:PSRAM ASYNC 1 32MBIT 2MX16 70NS 54VFBGA - Trays 制造商:Micron Technology Inc 功能描述:IC PSRAM 32MBIT 70NS 54VFBGA |
| MT45W2MW16BABB-706 WT TR | 功能描述:IC PSRAM 32MBIT 70NS 54VFBGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:96 系列:- 格式 - 存储器:闪存 存储器类型:FLASH 存储容量:16M（2M x 8，1M x 16） 速度:70ns 接口:并联 电源电压:2.65 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-TFSOP（0.724"，18.40mm 宽） 供应商设备封装:48-TSOP 包装:托盘 |
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