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参数资料
| 型号： | MT45W2MV16BAFB-706LIT |
| 元件分类： | SRAM |
| 英文描述： | 2M X 16 PSEUDO STATIC RAM, 70 ns, PBGA54 |
| 封装： | FBGA-54 |
| 文件页数： | 9/55页 |
| 文件大小： | 816K |
| 代理商： | MT45W2MV16BAFB-706LIT |
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2 MEG x 16
ASYNC/PAGE/BURST CellularRAM MEMORY
ADVANCE
09005aef80ec6f63
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Burst CellularRAM_32.fm - Rev. A 2/18/04 EN
17
2004 Micron Technology, Inc. All Rights Reserved.
Bus Configuration Register
The BCR defines how the CellularRAM device inter-
acts with the system memory bus. Page mode opera-
tion is enabled by a bit contained in the RCR. Table 5
on page 17 describes the control bits in the BCR. At
power-up, the BCR is set to 9D4Fh.
The BCR is accessed using CRE and A[19] HIGH, or
through the configuration register software sequence
with DQ = 0001h on the third cycle.
Table 5:
Bus Configuration Register Definition
NOTE:
1. All burst WRITEs are continuous.
A13
13 12 11
0
Latency
Counter
3
21
WAIT
Polarity
4
5
WAIT
Configuration (WC)
Clock
Configuration (CC)
6
7
8
Output
Impedance
Burst
Wrap (BW)*
14
A12A11 A10
A9
A8
A7
A6
A5
A4
A3
A2 A1 A0
0
1
Operation Mode
Synchronous burst access mode
Asynchronous access mode (default)
BCR[12]
BCR[11]
Latency Counter
BCR[13]
0
1
0
1
0
1
0
1
0
1
0
1
0
1
Code 0–Reserved
Code 1–Reserved
Code 2
Code 3 (Default)
Code 4–Reserved
Code 5–Reserved
Code 6–Reserved
Code 7–Reserved
0
1
WAIT Polarity
Active LOW
Active HIGH (default)
BCR[10]
0
1
WAIT Configuration
Asserted during delay
Asserted one data cycle before delay (default)
0
1
Output Impedance
Full Drive (default)
1/4 Drive
BCR[5]
Burst Wrap (Note 1)
Burst wraps within the burst length
Burst no wrap (default)
BCR[3]
BCR[1] BCR[0]
Burst Length (Note 1)
BCR[2]
15
Burst
Length (BL)*
Reserved
9
10
Reserved
Operating
Mode
Reserved
20
A14
A15
A[18:16]
0
1
Register Select
Select RCR
Select BCR
Must be set to "0"
19
18–16
Register
Select
Reserved
A19
A[20]
Reserved
Must be set to "0"
All must be set to "0"
BCR[8]
0
1
Clock Configuration
Not supported
Rising edge (default)
BCR[6]
BCR[15]
BCR[19]
0
1
0
1
0
1
0
1
4 words
8 words
16 words
Continuous burst (default)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MT45W2MV16PFA-70 WT | 制造商:Micron Technology Inc 功能描述:2MX16 PSRAM PLASTIC WIRELESS TEMP FBGA 1.8V ASYNCH PSEUDO ST - Trays |
| MT45W2MW16BABB-706 L WT | 功能描述:IC PSRAM 32MBIT 70NS 54VFBGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:378 系列:- 格式 - 存储器:闪存 存储器类型:FLASH 存储容量:8M（1M x 8，512K x 16） 速度:110ns 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-CBGA 供应商设备封装:48-CBGA（7x7） 包装:托盘 |
| MT45W2MW16BABB-706 L WT TR | 制造商:Micron Technology Inc 功能描述:PSRAM ASYNC 1 32MBIT 2MX16 70NS 54VFBGA - Tape and Reel |
| MT45W2MW16BABB-706 WT | 制造商:Micron Technology Inc 功能描述:PSRAM Async 1 32M-Bit 2M x 16 70ns 54-Pin VFBGA Tray 制造商:Micron Technology Inc 功能描述:PSRAM ASYNC 1 32MBIT 2MX16 70NS 54VFBGA - Trays 制造商:Micron Technology Inc 功能描述:IC PSRAM 32MBIT 70NS 54VFBGA |
| MT45W2MW16BABB-706 WT TR | 功能描述:IC PSRAM 32MBIT 70NS 54VFBGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:96 系列:- 格式 - 存储器:闪存 存储器类型:FLASH 存储容量:16M（2M x 8，1M x 16） 速度:70ns 接口:并联 电源电压:2.65 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-TFSOP（0.724"，18.40mm 宽） 供应商设备封装:48-TSOP 包装:托盘 |
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