参数资料
型号: MT45W2MV16BAFB-706LIT
元件分类: SRAM
英文描述: 2M X 16 PSEUDO STATIC RAM, 70 ns, PBGA54
封装: FBGA-54
文件页数: 22/55页
文件大小: 816K
代理商: MT45W2MV16BAFB-706LIT
2 MEG x 16
ASYNC/PAGE/BURST CellularRAM MEMORY
ADVANCE
09005aef80ec6f63
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Burst CellularRAM_32.fm - Rev. A 2/18/04 EN
29
2004 Micron Technology, Inc. All Rights Reserved.
NOTE:
1. Clock rates below 50 MHz (tCLK > 20ns) are allowed as long as tCSP specifications are met.
Table 19:
Burst WRITE Cycle Timing Requirements
PARAMETER
SYMBOL
-701
-706, -856
UNITS
NOTES
MIN
MAX
MIN
MAX
CE# HIGH between Subsequent Mixed-Mode Operations tCBPH
5
ns
CE# LOW to WAIT Valid
tCEW
17.5
1
7.5
ns
Clock Period
tCLK
9.62
20
15
20
ns
1
CE# Setup to CLK Active Edge
tCSP
4
20
5
20
ns
Hold Time from Active CLK Edge
tHD
22
ns
Chip Disable to WAIT High-Z Output
tHZ
88
ns
CLK Rise or Fall Time
tKHKL
1.6
ns
Clock to WAIT Valid
tKHTL
6.5
10
ns
CLK HIGH or LOW Time
tKP
33
ns
Setup Time to Activate CLK Edge
tSP
3
ns
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