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参数资料
| 型号： | MT45W2MV16BAFB-706LIT |
| 元件分类： | SRAM |
| 英文描述： | 2M X 16 PSEUDO STATIC RAM, 70 ns, PBGA54 |
| 封装： | FBGA-54 |
| 文件页数： | 55/55页 |
| 文件大小： | 816K |
| 代理商： | MT45W2MV16BAFB-706LIT |
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2 MEG x 16
ASYNC/PAGE/BURST CellularRAM MEMORY
ADVANCE
09005aef80ec6f63
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Burst CellularRAM_32.fm - Rev. A 2/18/04 EN
9
2004 Micron Technology, Inc. All Rights Reserved.
Functional Description
In general, the MT45W2MW16BA device is a high-
density alternative to SRAM and Pseudo SRAM prod-
ucts, popular in low-power, portable applications.
The MT45W2MW16BA contains 33,554,432 bits
organized as 2,097,152 addresses by 16 bits. The device
implements the same high-speed bus interface found
on burst mode Flash products.
The CellularRAM bus interface supports both asyn-
chronous and burst mode transfers. Page mode
accesses are also included as a bandwidth-enhancing
extension to the asynchronous read protocol.
Power-Up Initialization
CellularRAM products include an on-chip voltage
sensor used to launch the power-up initialization pro-
cess. Initialization will configure the BCR and the RCR
with their default settings (see Table 5 on page 17 and
simultaneously. When they reach a stable level at or
above 1.70V, the device will require 150s to complete
its self-initialization process. During the initialization
period, CE# should remain HIGH. When initialization
is complete, the device is ready for normal operation.
Figure 3: Power-Up Initialization
Timing
Bus Operating Modes
The MT45W2MW16BA CellularRAM product incor-
porates a burst mode interface found on Flash prod-
ucts targeting low-power, wireless applications. This
bus interface supports asynchronous, page mode, and
burst mode read and write transfers. The specific inter-
face supported is defined by the value loaded into the
bus configuration register. Page mode is controlled by
the refresh configuration register (RCR[7]).
Asynchronous Mode
CellularRAM products power up in the asynchro-
nous operating mode. This mode uses the industry-
standard SRAM control bus (CE#, OE#, WE#, LB#/
UB#). READ operations (Figure 4) are initiated by
bringing CE#, OE#, and LB#/UB# LOW while keeping
WE# HIGH. Valid data will be driven out of the I/Os
after the specified access time has elapsed. WRITE
operations (Figure 5) occur when CE#, WE#, and LB#/
UB# are driven LOW. During asynchronous WRITE
operations, the OE# level is a “Don't Care,” and WE#
will override OE#. The data to be written is latched on
the rising edge of CE#, WE#, or LB#/UB# (whichever
occurs first). Asynchronous operations (page mode
disabled) can either use the ADV input to latch the
address, or ADV can be driven LOW during the entire
READ/WRITE operation.
During asynchronous operation, the CLK input must
be static (HIGH or LOW—no transition). WAIT will be
driven while the device is enabled and its state should
be ignored.
Figure 4: READ Operation (ADV = LOW)
NOTE:
ADV must remain LOW for page mode operation.
Figure 5: WRITE Operation (ADV = LOW)
Vcc
VccQ
Device Initialization
Vcc = 1.70V
Device ready for
normal operation
tPU > 150s
ADDRESS VALID
DATA
CE#
DON’T CARE
DATA VALID
OE#
WE#
LB#/UB#
tRC = READ Cycle Time
ADDRESS
ADDRESS VALID
DATA
CE#
DON’T CARE
DATA VALID
OE#
WE#
LB#/UB#
tWC = WRITE Cycle Time
ADDRESS
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MT45W2MV16PFA-70 WT | 制造商:Micron Technology Inc 功能描述:2MX16 PSRAM PLASTIC WIRELESS TEMP FBGA 1.8V ASYNCH PSEUDO ST - Trays |
| MT45W2MW16BABB-706 L WT | 功能描述:IC PSRAM 32MBIT 70NS 54VFBGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:378 系列:- 格式 - 存储器:闪存 存储器类型:FLASH 存储容量:8M（1M x 8，512K x 16） 速度:110ns 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-CBGA 供应商设备封装:48-CBGA（7x7） 包装:托盘 |
| MT45W2MW16BABB-706 L WT TR | 制造商:Micron Technology Inc 功能描述:PSRAM ASYNC 1 32MBIT 2MX16 70NS 54VFBGA - Tape and Reel |
| MT45W2MW16BABB-706 WT | 制造商:Micron Technology Inc 功能描述:PSRAM Async 1 32M-Bit 2M x 16 70ns 54-Pin VFBGA Tray 制造商:Micron Technology Inc 功能描述:PSRAM ASYNC 1 32MBIT 2MX16 70NS 54VFBGA - Trays 制造商:Micron Technology Inc 功能描述:IC PSRAM 32MBIT 70NS 54VFBGA |
| MT45W2MW16BABB-706 WT TR | 功能描述:IC PSRAM 32MBIT 70NS 54VFBGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:96 系列:- 格式 - 存储器:闪存 存储器类型:FLASH 存储容量:16M（2M x 8，1M x 16） 速度:70ns 接口:并联 电源电压:2.65 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-TFSOP（0.724"，18.40mm 宽） 供应商设备封装:48-TSOP 包装:托盘 |
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