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参数资料
| 型号： | MT45W2MV16BAFB-706LIT |
| 元件分类： | SRAM |
| 英文描述： | 2M X 16 PSEUDO STATIC RAM, 70 ns, PBGA54 |
| 封装： | FBGA-54 |
| 文件页数： | 15/55页 |
| 文件大小： | 816K |
| 代理商： | MT45W2MV16BAFB-706LIT |
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2 MEG x 16
ASYNC/PAGE/BURST CellularRAM MEMORY
ADVANCE
09005aef80ec6f63
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Burst CellularRAM_32.fm - Rev. A 2/18/04 EN
22
2004 Micron Technology, Inc. All Rights Reserved.
Deep Power-Down (RCR[4])
Default = DPD Disabled
The deep power-down bit enables and disables all
refresh-related activity. This mode is used if the system
does not require the storage provided by the Cellular-
RAM device. Any stored data will become corrupted
when DPD is enabled. When refresh activity has been
re-enabled, the CellularRAM device will require 150s
to perform an initialization procedure before normal
operations can resume.
Deep power-down is enabled when RCR[4] = 0, and
remains enabled until RCR[4] is set to “1.” DPD should
not be enabled or disabled with the software access
sequence; instead, use CRE to access the RCR.
Temperature Compensated Refresh (RCR[6:5])
Default = On-Chip Temperature Sensor
This CellularRAM device includes an on-chip tem-
perature sensor that automatically adjusts the refresh
rate according to the operating temperature. The on-
chip TCR is enabled by clearing both of the TCR bits in
the refresh configuration register (RCR[6:5] = 00b). Any
other TCR setting enables a fixed refresh rate. When
the on-chip temperature sensor is enabled, the device
continually adjusts the refresh rate according to the
operating temperature.
The TCR bits also allow for adequate fixed-rate
refresh at three different temperature thresholds
(+15°C, +45°C, and +85°C). The setting selected must
be for a temperature higher than the case tempera-
ture of the CellularRAM device. If the case tempera-
ture is +35°C, the system can minimize self refresh
current consumption by selecting the +45°C setting.
The +15°C setting would result in inadequate
refreshing and cause data corruption.
Page Mode Operation (RCR[7])
Default = Disabled
The page mode operation bit determines whether
page mode is enabled for asynchronous READ opera-
tions. In the power-up default state, page mode is dis-
abled.
Table 9:
32Mb Address Patterns for PAR (RCR[4] = 1)
RCR[2]
RCR[1]
RCR[0]
ACTIVE SECTION
ADDRESS SPACE
SIZE
DENSITY
0
Full die
000000h–1FFFFFh
2 Meg x 16
32Mb
0
1
Three-quarters of die
000000h–17FFFFh
1.5 Meg x 16
24Mb
0
1
0
One-half of die
000000h–0FFFFFh
1 Meg x 16
16Mb
0
1
One-quarter of die
000000h–07FFFFh
512K x 16
8Mb
1
0
None of die
0
0 Meg x 16
0Mb
1
0
1
Three-quarters of die
080000h–1FFFFFh
1.5 Meg x 16
24Mb
1
0
One-half of die
100000h–1FFFFFh
1 Meg x 16
16Mb
1
One-quarter of die
180000h–1FFFFFh
512K x 16
8Mb
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MT45W2MV16PFA-70 WT | 制造商:Micron Technology Inc 功能描述:2MX16 PSRAM PLASTIC WIRELESS TEMP FBGA 1.8V ASYNCH PSEUDO ST - Trays |
| MT45W2MW16BABB-706 L WT | 功能描述:IC PSRAM 32MBIT 70NS 54VFBGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:378 系列:- 格式 - 存储器:闪存 存储器类型:FLASH 存储容量:8M（1M x 8，512K x 16） 速度:110ns 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-CBGA 供应商设备封装:48-CBGA（7x7） 包装:托盘 |
| MT45W2MW16BABB-706 L WT TR | 制造商:Micron Technology Inc 功能描述:PSRAM ASYNC 1 32MBIT 2MX16 70NS 54VFBGA - Tape and Reel |
| MT45W2MW16BABB-706 WT | 制造商:Micron Technology Inc 功能描述:PSRAM Async 1 32M-Bit 2M x 16 70ns 54-Pin VFBGA Tray 制造商:Micron Technology Inc 功能描述:PSRAM ASYNC 1 32MBIT 2MX16 70NS 54VFBGA - Trays 制造商:Micron Technology Inc 功能描述:IC PSRAM 32MBIT 70NS 54VFBGA |
| MT45W2MW16BABB-706 WT TR | 功能描述:IC PSRAM 32MBIT 70NS 54VFBGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:96 系列:- 格式 - 存储器:闪存 存储器类型:FLASH 存储容量:16M（2M x 8，1M x 16） 速度:70ns 接口:并联 电源电压:2.65 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-TFSOP（0.724"，18.40mm 宽） 供应商设备封装:48-TSOP 包装:托盘 |
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