参数资料
型号: MT45W2MV16BAFB-706LIT
元件分类: SRAM
英文描述: 2M X 16 PSEUDO STATIC RAM, 70 ns, PBGA54
封装: FBGA-54
文件页数: 33/55页
文件大小: 816K
代理商: MT45W2MV16BAFB-706LIT
2 MEG x 16
ASYNC/PAGE/BURST CellularRAM MEMORY
ADVANCE
09005aef80ec6f63
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Burst CellularRAM_32.fm - Rev. A 2/18/04 EN
39
2004 Micron Technology, Inc. All Rights Reserved.
Figure 31: CE#-Controlled Asynchronous WRITE
A[20:0]
ADV#
CE#
LB#/UB#
OE#
WE#
WAIT
DQ[15:0]
IN
VALID ADDRESS
High-Z
tWC
tCEW
tHZ
VALID INPUT
tAW
DON’T CARE
tWR
tCW
tDW
DQ[15:0]
OUT
tWHZ
tBW
tLZ
tDH
tAS
tCEM
tWP
tWPH
VIH
VIL
VIH
VIL
VIH
VIL
VIH
VIL
VIH
VIL
VIH
VIL
VIH
VIL
VOH
VOL
VIH
VIL
High-Z
Table 29:
Asynchronous WRITE Timing Parameters—CE#-Controlled
SYMBOL
-701, -706
-856
UNITS
SYMBOL
-701, -706
-856
UNITS
MIN
MAX
MIN
MAX
MIN
MAX
MIN
MAX
tAS
00
ns
tHZ
88
ns
tAW
70
85
ns
tLZ
10
ns
tBW
70
85
ns
tWC
70
85
ns
tCEM
10
s
tWHZ
88
ns
tCEW
1
7.5
1
7.5
ns
tWP
46
55
ns
tCW
70
85
ns
tWPH
10
ns
tDH
00
ns
tWR
00
ns
tDW
23
ns
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