参数资料
型号: MT46H128M32L2JV-54AT:A
元件分类: DRAM
英文描述: 128M X 32 DDR DRAM, 5 ns, PBGA168
封装: 12 X 12 MM, GREEN, PLASTIC, VFBGA-168
文件页数: 76/106页
文件大小: 3431K
Figure 32: Consecutive READ Bursts
CK
CK#
CK
CK#
T0
T1
T2
T3
T2n
T3n
T4
T0
T1
T2
T3
T2n
T3n
T4
T5
T1n
T4n
T5n
T5
T4n
T5n
Command
READ
NOP
READ
NOP
Address
Bank,
Col n
Bank,
Col b
Command
READ
NOP
READ
NOP
Address
Bank,
Col n
Bank,
Col b
Don’t Care
Transitioning Data
DQ
DQS
CL = 2
DQ
DQS
CL = 3
DOUT
n1
DOUT
n + 1
DOUT
n + 3
DOUT
n + 2
DOUT
b
DOUT
b + 1
DOUT
b + 3
DOUT
b + 2
DOUT
n
DOUT
n + 1
DOUT
n + 3
DOUT
n + 2
DOUT
b
DOUT
b + 1
Notes: 1. DOUTn (or b) = data-out from column n (or column b).
2. BL = 4, 8, or 16 (if 4, the bursts are concatenated; if 8 or 16, the second burst interrupts
the first).
3. Shown with nominal tAC, tDQSCK, and tDQSQ.
4. Example applies only when READ commands are issued to same device.
2Gb: x16, x32 Mobile LPDDR SDRAM
READ Operation
PDF: 09005aef83a73286
2gb_ddr_mobile_sdram_t69m.pdf - Rev. M 11/10 EN
71
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2009 Micron Technology, Inc. All rights reserved.
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