参数资料
型号: MT46H128M32L2JV-54AT:A
元件分类: DRAM
英文描述: 128M X 32 DDR DRAM, 5 ns, PBGA168
封装: 12 X 12 MM, GREEN, PLASTIC, VFBGA-168
文件页数: 97/106页
文件大小: 3431K
Figure 51: WRITE-to-PRECHARGE – Interrupting
tDQSS (NOM)
CK
CK#
Command1
WRITE2
NOP
Address
Bank a,
Col b
Bank
(a or all)
NOP
T0
T1
T2
T3
T2n
T4
T5
T1n
T6
DQ6
DQS5
DM
tDQSS
tDQSS (MIN)
DQ6
DQS5
DM
tDQSS
tDQSS (MAX)
DQ6
DQS5
DM
tDQSS
Don’t Care
Transitioning Data
tWR4
PRE3
T4n
T3n
DIN
b
DIN
b + 1
DIN
b
DIN
b + 1
DIN
b
DIN
b + 1
Notes: 1. An interrupted burst of 8 is shown; two data elements are written.
2. A10 is LOW with the WRITE command (auto precharge is disabled).
3. PRE = PRECHARGE.
4. tWR is referenced from the first positive CK edge after the last data-in pair.
5. DQS is required at T4 and T4n to register DM.
6. DINb = data-in for column b.
2Gb: x16, x32 Mobile LPDDR SDRAM
WRITE Operation
PDF: 09005aef83a73286
2gb_ddr_mobile_sdram_t69m.pdf - Rev. M 11/10 EN
90
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2009 Micron Technology, Inc. All rights reserved.
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