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参数资料
| 型号： | MT46H128M32L2JV-54AT:A |
| 元件分类： | DRAM |
| 英文描述： | 128M X 32 DDR DRAM, 5 ns, PBGA168 |
| 封装： | 12 X 12 MM, GREEN, PLASTIC, VFBGA-168 |
| 文件页数： | 99/106页 |
| 文件大小： | 3431K |
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PRECHARGE Operation
The PRECHARGE command is used to deactivate the open row in a particular bank or
the open row in all banks. The bank(s) will be available for a subsequent row access
some specified time (tRP) after the PRECHARGE command is issued. Input A10 deter-
mines whether one or all banks will be precharged, and in the case where only one bank
is precharged (A10 = LOW), inputs BA0 and BA1 select the bank. When all banks are
precharged (A10 = HIGH), inputs BA0 and BA1 are treated as “Don’t Care.” After a bank
has been precharged, it is in the idle state and must be activated prior to any READ or
WRITE commands being issued to that bank. A PRECHARGE command will be treated
as a NOP if there is no open row in that bank (idle state), or if the previously open row is
already in the process of precharging.
Auto Precharge
Auto precharge is a feature that performs the same individual bank PRECHARGE func-
tion described previously, without requiring an explicit command. This is accomplish-
ed by using A10 to enable auto precharge in conjunction with a specific READ or WRITE
command. A precharge of the bank/row that is addressed with the READ or WRITE com-
mand is automatically performed upon completion of the READ or WRITE burst. Auto
precharge is nonpersistent; it is either enabled or disabled for each individual READ or
WRITE command.
Auto precharge ensures that the precharge is initiated at the earliest valid stage within a
burst. This earliest valid stage is determined as if an explicit PRECHARGE command
was issued at the earliest possible time without violating tRAS (MIN), as described for
each burst type in Table 19 (page 53). The READ with auto precharge enabled state or
the WRITE with auto precharge enabled state can each be broken into two parts: the
access period and the precharge period. The access period starts with registration of the
command and ends where tRP (the precharge period) begins. For READ with auto pre-
charge, the precharge period is defined as if the same burst was executed with auto
precharge disabled, followed by the earliest possible PRECHARGE command that still
accesses all the data in the burst. For WRITE with auto precharge, the precharge period
begins when tWR ends, with tWR measured as if auto precharge was disabled. In addi-
tion, during a WRITE with auto precharge, at least one clock is required during tWR
time. During the precharge period, the user must not issue another command to the
same bank until tRP is satisfied.
This device supports tRAS lock-out. In the case of a single READ with auto precharge or
single WRITE with auto precharge issued at tRCD (MIN), the internal precharge will be
delayed until tRAS (MIN) has been satisfied.
Bank READ operations with and without auto precharge are shown in Figure 53
(page 94) and Figure 54 (page 95). Bank WRITE operations with and without auto
precharge are shown in Figure 55 (page 96) and Figure 56 (page 97).
2Gb: x16, x32 Mobile LPDDR SDRAM
PRECHARGE Operation
PDF: 09005aef83a73286
2gb_ddr_mobile_sdram_t69m.pdf - Rev. M 11/10 EN
92
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2009 Micron Technology, Inc. All rights reserved.
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