参数资料
型号: MT46H128M32L2JV-54AT:A
元件分类: DRAM
英文描述: 128M X 32 DDR DRAM, 5 ns, PBGA168
封装: 12 X 12 MM, GREEN, PLASTIC, VFBGA-168
文件页数: 79/106页
文件大小: 3431K
Figure 35: Terminating a READ Burst
CK
CK#
T0
T1
T2
T3
T2n
T4
T5
T1n
CK
CK#
T0
T1
T2
T3
T2n
T4
T5
T3n
Command
READ1
BST2
NOP
Address
Bank a,
Col n
Don’t Care
Transitioning Data
DQ3
DQS
CL = 2
Command
READ1
BST2
NOP
Address
DQ3
DQS
CL = 3
DOUT
n
DOUT
n + 1
DOUT
n
DOUT
n + 1
Bank a,
Col n
Notes: 1. BL = 4, 8, or 16.
2. BST = BURST TERMINATE command; page remains open.
3. DOUTn = data-out from column n.
4. Shown with nominal tAC, tDQSCK, and tDQSQ.
5. CKE = HIGH.
2Gb: x16, x32 Mobile LPDDR SDRAM
READ Operation
PDF: 09005aef83a73286
2gb_ddr_mobile_sdram_t69m.pdf - Rev. M 11/10 EN
74
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2009 Micron Technology, Inc. All rights reserved.
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