参数资料
型号: MT46H128M32L2JV-54AT:A
元件分类: DRAM
英文描述: 128M X 32 DDR DRAM, 5 ns, PBGA168
封装: 12 X 12 MM, GREEN, PLASTIC, VFBGA-168
文件页数: 80/106页
文件大小: 3431K
Figure 36: READ-to-WRITE
CK#
T0
T1
T2
T3
T2n
T3n
T4
T5
T1n
T4n
T5n
CK
CK#
T0
T1
T2
T3
T2n
T3n
T4
T5
T4n
T5n
CK
Don’t Care
Transitioning Data
Command
READ1
BST2
NOP
Address
Bank,
Col n
WRITE1
Bank,
Col b
DM
tDQSS
(NOM)
DQ3,4
DQS
CL = 2
Command
READ1
BST2
NOP
Address
Bank,
Col n
WRITE1
Bank,
Col b
DM
tDQSS
(NOM)
DQ3,4
DQS
CL = 3
NOP
DOUT
n
DOUT
n + 1
DIN
b + 1
DIN
b
DOUT
n
DOUT
n + 1
DIN
b+1
DIN
b+2
DIN
b+3
DIN
b
Notes: 1. BL = 4 in the cases shown (applies for bursts of 8 and 16 as well; if BL = 2, the BST com-
mand shown can be NOP).
2. BST = BURST TERMINATE command; page remains open.
3. DOUTn = data-out from column n.
4. DINb = data-in from column b.
5. Shown with nominal tAC, tDQSCK, and tDQSQ.
6. CKE = HIGH.
2Gb: x16, x32 Mobile LPDDR SDRAM
READ Operation
PDF: 09005aef83a73286
2gb_ddr_mobile_sdram_t69m.pdf - Rev. M 11/10 EN
75
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2009 Micron Technology, Inc. All rights reserved.
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