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参数资料
| 型号： | S29XS064R0PBHW010 |
| 厂商： | SPANSION LLC |
| 元件分类： | PROM |
| 英文描述： | 4M X 16 FLASH 1.8V PROM, 80 ns, PBGA44 |
| 封装： | 7.50 X 5 MM, LEAD FREE, FBGA-44 |
| 文件页数： | 22/65页 |
| 文件大小： | 2116K |
| 代理商： | S29XS064R0PBHW010 |
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July 22, 2011 S29VS_XS064R_00_06
S29VS/XS-R MirrorBit
Flash Family
29
Da ta
Sh e e t
(Adv a n ce
In f o r m ation)
Table 10.2 CFI Query Identification String
Addresses
Data
Description
VS/XS064R
10h
11h
12h
0051h
0052h
0059h
Query Unique ASCII string “QRY”
13h
14h
0002h
0000h
Primary OEM Command Set
15h
16h
0040h
0000h
Address for Primary Extended Table
17h
18h
0000h
Alternate OEM Command Set (00h = none exists)
19h
1Ah
0000h
Address for Alternate OEM Extended Table (00h = none exists)
Table 10.3 System Interface String
Addresses
Data
Description
VS/XS064R
1Bh
0017h
VCC Min. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Ch
0019h
VCC Max. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Dh
0000h
VPP Min. voltage (00h = no VPP pin present) Refer to 4Dh
1Eh
0000h
VPP Max. voltage (00h = no VPP pin present) Refer to 4Eh
1Fh
0008h
Typical timeout per single byte/word write 2
N s
20h
0009h
Typical timeout for Min. size buffer write 2
N s (00h = not supported)
21h
000Ah
Typical timeout per individual block erase 2
N ms
22h
0011h
Typical timeout for full chip erase 2
N ms (00h = not supported)
23h
0003h
Max. timeout for byte/word write 2
N times typical
24h
0003h
Max. timeout for buffer write 2
N times typical
25h
0003h
Max. timeout per individual block erase 2
N times typical
26h
0003h
Max. timeout for full chip erase 2
N times typical (00h = not supported)
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