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| 型号： | S29XS064R0PBHW010 |
| 厂商： | SPANSION LLC |
| 元件分类： | PROM |
| 英文描述： | 4M X 16 FLASH 1.8V PROM, 80 ns, PBGA44 |
| 封装： | 7.50 X 5 MM, LEAD FREE, FBGA-44 |
| 文件页数： | 60/65页 |
| 文件大小： | 2116K |
| 代理商： | S29XS064R0PBHW010 |
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July 22, 2011 S29VS_XS064R_00_06
S29VS/XS-R MirrorBit
Flash Family
63
Da ta
Sh e e t
(Adv a n ce
In f o r m ation)
20. Erase and Programming Performance
Notes
1. Typical program and erase times assume the following conditions: 25°C, 1.8 V VCC, 10,000 cycles typical. Additionally, programming
typicals assume checkerboard pattern.
2. Under worst case conditions of -25°C, VCC = 1.70 V, 100,000 cycles.
3. Effective write buffer specification is based upon a 32-word write buffer operation.
4. The typical chip programming time is considerably less than the maximum chip programming time listed, since most words program faster
than the maximum program times listed.
5. In the pre-programming step of the Embedded Erase algorithm, all words are programmed to 00h before erasure.
6. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See Table 12.3
on page 43 for further information on command definitions.
21. BGA Ball Capacitance
Notes
1. Sampled, not 100% tested.
2. Test conditions TA = 25°C, f = 1.0 MHz.
Parameter
Typ (1)
Max (2)
Unit
Comments
Sector Erase Time
32 kword
VCC
0.8
3.5
s
Excludes 00h programming prior to erasure (Note 5)
8 kword
VCC
0.35
2
Chip Erase Time
VCC
103
453
VPP
103
453
Single Word Programming Time
VCC
170
800
s
Effective Word Programming Time
utilizing Program Write Buffer
VCC
14.1
94
VPP
960
Total 32-Word Buffer Programming
Time
VCC
450
3000
VPP
288
1920
Chip Programming Time (4)
VCC
59
78.6
s
Excludes system level overhead (Note 6)
VPP
38
52
Parameter Symbol
Parameter Description
Test Setup
Typ
Max
Unit
CIN
Input Capacitance
VIN = 0
4.2
5.0
pF
COUT
Output Capacitance
VOUT = 0
5.4
6.5
pF
CIN2
Control Pin Capacitance
VIN = 0
3.9
4.7
pF
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