参数资料
型号: W9725G6JB25I
厂商: Winbond Electronics
文件页数: 37/87页
文件大小: 0K
描述: IC DDR2 SDRAM 256MBIT 84WBGA
标准包装: 200
格式 - 存储器: RAM
存储器类型: DDR2 SDRAM
存储容量: 256M(16Mx16)
速度: 2.5ns
接口: 并联
电源电压: 1.7 V ~ 1.9 V
工作温度: -40°C ~ 95°C
封装/外壳: 84-TFBGA
供应商设备封装: 84-WBGA(8x12.5)
包装: 托盘
W9725G6JB
9. ELECTRICAL CHARACTERISTICS
9.1
Absolute Maximum Ratings
PARAMETER
Voltage on V DD pin relative to V SS
Voltage on V DDQ pin relative to V SS
Voltage on V DDL pin relative to V SS
Voltage on any pin relative to V SS
Storage Temperature
SYMBOL
V DD
V DDQ
V DDL
V IN , V OUT
T STG
RATING
-1.0 ~ 2.3
-0.5 ~ 2.3
-0.5 ~ 2.3
-0.5 ~ 2.3
-55 ~ 150
UNIT
V
V
V
V
°C
NOTES
1, 2
1, 2
1, 2
1, 2
1, 2, 3
Notes:
1. Stresses gr eater than those listed under “Absolute Ma x imum Ratings” may cause permanent damage to the dev ice. This is a
stress rating only and functional operation of the device at these or any other conditions above those indicated in the
operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
2. When V DD and V DDQ and V DDL are less than 500mV; V REF may be equal to or less than 300mV.
3. Storage temperature is the case surface temperature on the center/top side of the DRAM.
9.2
Operating Temperature Condition
PARAMETER
Operating Temperature (for -18/-25/-3)
Operating Temperature (for 25I/25A)
Operating Temperature (for 25A)
Operating Temperature (for 25K)
Operating Temperature (for 25K)
SYMBOL
T CASE
T CASE
T A
T CASE
T A
MIN.
0
-40
-40
-40
-40
MAX.
85
95
95
105
105
UNIT
°C
°C
°C
°C
°C
NOTES
1, 3, 5
1, 3, 4, 5, 6, 7
2
1, 3, 4, 5, 6, 8
2
Notes:
1. Operating case temperature is the case surface temperature on the center/top side of the DRAM.
2. Operating ambient temperature is the surrounding temperature of the DRAM.
3. Supporting 0°C ≤ T CASE ≤ 85 °C with full JEDEC AC and DC specifications.
4. Supporting -40°C ≤ T CASE ≤ 85 °C with full JEDEC AC and DC specifications.
5. Supporting 0°C ≤ T CASE ≤ 8 5°C and being able to extend to 95°C with doubling Auto Refresh commands in frequency to a
32 mS period ( t REFI = 3.9 μS) and to enter to Self Refresh mode at this high temperature range via A7 "1" on EMR (2).
6. Supporting -40°C ≤ T CASE ≤ 8 5°C and being able to extend to 95°C (for 25I/25A) or 105°C (for 25K) with doubling Auto
Refresh commands in frequency to a 32 mS period ( t REFI = 3.9 μS) and to enter to Self Refresh mode at this high
temperature range via A7 "1" on EMR (2).
7. During operation, the DRAM case temperature must be maintained between -40 to 95°C for 25I/25A parts under all
specification parameters.
8. During operation, the DRAM case temperature must be maintained between -40 to 105°C for 25K parts under all
specification parameters.
Publication Release Date: Nov. 29, 2011
- 37 -
Revision A02
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