参数资料
型号: ADUC7033BSTZ-88-RL
厂商: Analog Devices Inc
文件页数: 26/140页
文件大小: 0K
描述: IC BATT SENSOR PREC 48LQFP
标准包装: 2,000
功能: 电池监控器
电源电压: 3.5 V ~ 18 V
工作温度: -40°C ~ 115°C
安装类型: 表面贴装
封装/外壳: 48-LQFP
供应商设备封装: 48-LQFP(7x7)
包装: 带卷 (TR)

ADuC7033
FLASH/EE MEMORY
The ADuC7033 incorporates Flash/EE memory technology
on-chip to provide the user with nonvolatile, in-circuit repro-
grammable memory space.
Like EEPROM, Flash memory can be programmed in-system at
a byte level, although it must first be erased, the erase being
performed in page blocks. Thus, Flash memory is often and
more correctly referred to as Flash/EE memory.
Overall, Flash/EE memory represents a step closer to the ideal
memory device that includes nonvolatility, in-circuit program-
mability, high density, and low cost. Incorporated within the
ADuC7033, Flash/EE memory technology allows the user to
update program code space in-circuit, without the need to
replace one time programmable (OTP) devices at remote
operating nodes.
The Flash/EE memory is physically located at 0x80000. Upon a
hard reset, it logically maps to 0x00000000. The factory default
contents of all Flash/EE memory locations is 0xFF. Flash/EE
memory can be read in 8-/16-/32-bit segments, and written in
segments of 16 bits. The Flash/EE memory is rated for 10,000
endurance cycles. This rating is based on the number of times
that each individual byte is cycled, that is, erased and
programmed. Implementing a redundancy scheme in the
software ensures a greater than 10,000-cycle endurance.
The user can also write data variables to the Flash/EE memory
during run-time code execution, for example, for storing
diagnostic battery parameter data.
The entire Flash/EE memory is available to the user as code and
nonvolatile data memory. There is no distinction between data
and program, because ARM code shares the same space. The
real width of the Flash/EE memory is 16 bits, meaning that in
ARM mode (32-bit instruction), two accesses to the Flash/EE
memory are necessary for each instruction fetch. When
operating at speeds of less than 20.48 MHz, the Flash/EE
memory controller can transparently fetch the second 16-bit
halfword (part of the 32-bit ARM operation code) within a
PROGRAMMING FLASH/EE MEMORY IN-CIRCUIT
The Flash/EE memory can be programmed in-circuit, using a
serial download mode via the LIN interface or the integrated
JTAG port.
Serial Downloading (In-Circuit Programming)
The ADuC7033 facilitates code download via the LIN pin.
JTAG Access
The ADuC7033 features an on-chip JTAG debug port to
facilitate code download and debug.
ADuC7033 Flash/EE Memory
The total 96 kB of Flash/EE memory are organized as 47,000 ×
16 bits. Of the 96 kB, 94 kB is user space and 2 kB is reserved
for boot loader/kernel space.
FLASH/EE MEMORY CONTROL INTERFACE
The access to and control of the Flash/EE memory on the
ADuC7033 is managed by an on-chip memory controller. The
controller manages the Flash/EE memory as two separate
blocks (0 and 1).
Block0 consists of the 32 kB Flash/EE memory mapped from
0x00090000 to 0x00097FFF (including the 2 kB kernel space
which is reserved at the top of this block).
Block1 consists of the 64 kB Flash/EE memory mapped from
0x00080000 to 0x0008FFFF.
Note that the MCU core can continue to execute code from one
memory block while an active erase or program cycle is being
carried out on the other block. If a command operates on the
same block as the code currently executing, the core halts until
the command is completed; this also applies to code execution.
User code, LIN, and JTAG programming use the Flash/EE
memory control interface, consisting of the following MMRs:
? FEExSTA (x = 0 or 1): read only register, reflects the status
of the Flash/EE memory control interface.
single core clock period. Therefore, it is recommended that for
speeds less than 20.48 MHz, that is, CD > 0, use ARM mode. For
20.48MHz operation, that is, CD = 0, it is recommended to
operate in Thumb mode.
The page size of this Flash/EE memory is 512 bytes. Typically,
it takes the Flash/EE memory controller 20 ms to erase a page,
regardless of CD. To write a 16-bit word at CD = 0, 1, 2, 3
requires 50 μs; 70 μs at CD = 4, 5; 80 μs at CD = 6; and 105 μs
at CD = 7.
It is possible to write to a single, 16-bit location only twice
between erases, that is, it is possible to walk bytes, not bits.
If a location is written to more than twice, then it is possible
to corrupt the contents of the Flash/EE memory page.
?
?
?
?
?
?
?
FEExMOD (x = 0 or 1): sets the operating mode of the
Flash/EE memory control interface.
FEExCON (x = 0 or 1): 8-bit command register. The
commands are interpreted as described in Table 13.
FEExDAT (x = 0 or 1): 16-bit data register.
FEExADR (x= 0 or 1): 16-bit address register.
FEExSIG (x = 0 or 1): Holds the 24-bit code signature as a
result of the signature command being initiated.
FEExHID (x = 0 or 1): Protection MMR. Controls read and
write protection of the Flash/EE memory code space. If
previously configured via the FEExPRO register, FEExHID
may require a software key to enable access.
FEExPRO (x = 0 or 1): A buffer of the FEExHID register,
which is used to store the FEExHID value; therefore, it is
automatically downloaded to the FEExHID registers on
subsequent reset and power-on events.
Rev. B | Page 26 of 140
相关PDF资料
PDF描述
ADUM3070ARQZ IC REG PUSH-PLL CTRLR ISO 16SSOP
AH284-WL-7 IC HALL FAN CTRLR 500MA SC59-3
AH285-WL-7 IC HALL FAN CTRLR 400MA SC59-3
AH286-WL-7 IC HALL FAN CTRLR 400MA SC59-3
AH287-YL-13 IC HALL FAN CTRLR 500MA SOT89-5
相关代理商/技术参数
参数描述
ADUC7033BSTZ-8L 制造商:Analog Devices 功能描述:INTEGRATED PRECISION BATTERY SENSOR 48LQFP - Trays 制造商:Rochester Electronics LLC 功能描述:
ADUC7033BSTZ-8L-RL 制造商:Analog Devices 功能描述:INTEGRATED PRECISION BATTERY SENSOR 48LQFP - Tape and Reel
ADUC7033BSTZ8VTCRL 制造商:Analog Devices 功能描述:
ADUC7034 制造商:AD 制造商全称:Analog Devices 功能描述:Integrated Precision Battery Sensor for Automotive
ADUC7034BCPZ 功能描述:IC MCU FLASH 32K ANLG IO 48LFCSP RoHS:是 类别:集成电路 (IC) >> 嵌入式 - 微控制器, 系列:MicroConverter® ADuC7xxx 标准包装:38 系列:Encore!® XP® 核心处理器:eZ8 芯体尺寸:8-位 速度:5MHz 连通性:IrDA,UART/USART 外围设备:欠压检测/复位,LED,POR,PWM,WDT 输入/输出数:16 程序存储器容量:4KB(4K x 8) 程序存储器类型:闪存 EEPROM 大小:- RAM 容量:1K x 8 电压 - 电源 (Vcc/Vdd):2.7 V ~ 3.6 V 数据转换器:- 振荡器型:内部 工作温度:-40°C ~ 105°C 封装/外壳:20-SOIC(0.295",7.50mm 宽) 包装:管件 其它名称:269-4116Z8F0413SH005EG-ND