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参数资料
| 型号： | M58WR064KU70ZA6U |
| 厂商： | NUMONYX |
| 元件分类： | PROM |
| 英文描述： | 4M X 16 FLASH 1.8V PROM, 70 ns, PBGA44 |
| 封装： | 7.50 X 5 MM, 0.50 MM PITCH, ROHS COMPLIANT, VFBGA-44 |
| 文件页数： | 112/122页 |
| 文件大小： | 2187K |
| 代理商： | M58WR064KU70ZA6U |
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M58WRxxxKU, M58WRxxxKL
Description
1
Description
The M58WR016KU/L, M58WR032KU/L and M58WR064KU/L are 16-Mbit (1 Mbit × 16),
32- Mbit (2 Mbits × 16) and 64-Mbit (4 Mbits × 16) non-volatile flash memories, respectively.
In the rest of the document, they will be referred to as M58WRxxxKU/L unless otherwise
specified.
The M58WRxxxKU/L may be erased electrically at block level and programmed in-system
on a word-by-word basis using a 1.7 V to 2 V VDD supply for the circuitry and a 1.7 V to 2 V
VDDQ supply for the input/output pins. An optional 9 V VPP power supply is provided to
speed up customer programming.
The first 16 address lines are multiplexed with the data input/output signals on the
multiplexed address/data bus ADQ0-ADQ15. The remaining address lines, A16-Amax, are
the most significant bit addresses.
The device features an asymmetrical block architecture:
●
the M58WR016KU/L have an array of 39 blocks, and are divided into 4-Mbit banks.
There are 3 banks each containing 8 main blocks of 32 Kwords, and one parameter
bank containing 8 parameter blocks of 4 Kwords and 7 main blocks of 32 Kwords.
●
the M58WR032KU/L have an array of 71 blocks, and are divided into 4-Mbit banks.
There are 7 banks each containing 8 main blocks of 32 Kwords, and one parameter
bank containing 8 parameter blocks of 4 Kwords and 7 main blocks of 32 Kwords.
●
the M58WR064KU/L have an array of 135 blocks, and are divided into 4-Mbit banks.
There are 15 banks each containing 8 main blocks of 32 Kwords, and one parameter
bank containing 8 parameter blocks of 4 Kwords and 7 main blocks of 32 Kwords.
The multiple bank architecture allows dual operations; while programming or erasing in one
bank, read operations are possible in other banks. Only one bank at a time is allowed to be
in program or erase mode. It is possible to perform burst reads that cross bank boundaries.
address space for the M58WR016KU, M58WR032KU and M58WR064KU, and at the
bottom for the M58WR016KL, M58WR032KL and M58WR064KL.
Each block can be erased separately. Erase can be suspended to perform program in any
other block, and then resumed. Program can be suspended to read data in any other block
and then resumed. Each block can be programmed and erased over 100,000 cycles using
the supply voltage VDD. There are two enhanced factory programming commands available
to speed up programming.
Program and erase commands are written to the command interface of the memory. An
internal program/erase controller takes care of the timings necessary for program and erase
operations. The end of a program or erase operation can be detected and any error
conditions identified in the status register. The command set required to control the memory
is consistent with JEDEC standards.
The device supports synchronous burst read and asynchronous read from all blocks of the
memory array; at power-up the device is configured for asynchronous read. In synchronous
burst mode, data is output on each clock cycle at frequencies of up to 66 MHz. The
synchronous burst read operation can be suspended and resumed.
相关PDF资料 |
PDF描述 |
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| M3L13TCNFREQ | CRYSTAL OSCILLATOR, CLOCK, 1.544 MHz - 125 MHz, HCMOS OUTPUT |
| M3L14FCNFREQ | CRYSTAL OSCILLATOR, CLOCK, 1.544 MHz - 125 MHz, HCMOS OUTPUT |
| M3L15TGNFREQ | CRYSTAL OSCILLATOR, CLOCK, 1.544 MHz - 125 MHz, HCMOS OUTPUT |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| M58WR064T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:64 Mbit (4Mb x 16, Multiple Bank, Burst ) 1.8V Supply Flash Memory |
| M58WR064T100ZB6T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:64 Mbit (4Mb x 16, Multiple Bank, Burst ) 1.8V Supply Flash Memory |
| M58WR064T70ZB6T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:64 Mbit (4Mb x 16, Multiple Bank, Burst ) 1.8V Supply Flash Memory |
| M58WR064T85ZB6T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:64 Mbit (4Mb x 16, Multiple Bank, Burst ) 1.8V Supply Flash Memory |
| M58WR128EB | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory |
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