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参数资料
| 型号： | M58WR064KU70ZA6U |
| 厂商： | NUMONYX |
| 元件分类： | PROM |
| 英文描述： | 4M X 16 FLASH 1.8V PROM, 70 ns, PBGA44 |
| 封装： | 7.50 X 5 MM, 0.50 MM PITCH, ROHS COMPLIANT, VFBGA-44 |
| 文件页数： | 49/122页 |
| 文件大小： | 2187K |
| 代理商： | M58WR064KU70ZA6U |
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Command interface - factory program commands
M58WRxxxKU, M58WRxxxKL
6.2
Quadruple Word Program command
The Quadruple Word Program command improves the programming throughput by writing a
page of four adjacent words in parallel. The four words must differ only for the addresses
ADQ0 and ADQ1. If the block is protected then the quadruple word program operation
aborts, the data in the block does not change, and the status register outputs the error.
If programming is attempted with VPP ≠ VPPH, the command is ignored.
Five bus write cycles are necessary to issue the Quadruple Word Program command.
●
The first bus cycle sets up the Double Word Program command.
●
The second bus cycle latches the address and the data of the first word to be written.
●
The third bus cycle latches the address and the data of the second word to be written.
●
The fourth bus cycle latches the address and the data of the third word to be written.
●
The fifth bus cycle latches the address and the data of the fourth word to be written and
starts the program/erase controller.
Read operations to the bank being programmed output the status register content after the
programming has started.
Programming aborts if Reset goes to VIL. As data integrity cannot be guaranteed when the
program operation is aborted, the memory locations must be reprogrammed.
During quadruple word program operations the bank being programmed only accepts the
Read Array, Read Status Register, Read Electronic Signature and Read CFI Query
commands; all other commands are ignored.
Dual operations are not supported during quadruple word program operations and the
command cannot be suspended. Typical program times are given in Table 18: Program and
flowchart for using the Quadruple Word Program command.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| M58WR064T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:64 Mbit (4Mb x 16, Multiple Bank, Burst ) 1.8V Supply Flash Memory |
| M58WR064T100ZB6T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:64 Mbit (4Mb x 16, Multiple Bank, Burst ) 1.8V Supply Flash Memory |
| M58WR064T70ZB6T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:64 Mbit (4Mb x 16, Multiple Bank, Burst ) 1.8V Supply Flash Memory |
| M58WR064T85ZB6T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:64 Mbit (4Mb x 16, Multiple Bank, Burst ) 1.8V Supply Flash Memory |
| M58WR128EB | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory |
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