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参数资料
| 型号： | M58WR064KU70ZA6U |
| 厂商： | NUMONYX |
| 元件分类： | PROM |
| 英文描述： | 4M X 16 FLASH 1.8V PROM, 70 ns, PBGA44 |
| 封装： | 7.50 X 5 MM, 0.50 MM PITCH, ROHS COMPLIANT, VFBGA-44 |
| 文件页数： | 34/122页 |
| 文件大小： | 2187K |
| 代理商： | M58WR064KU70ZA6U |
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M58WRxxxKU, M58WRxxxKL
Signal descriptions
19/123
2.13
VDDQ supply voltage
VDDQ provides the power supply to the I/O pins and enables all outputs to be powered
independently from VDD. VDDQ can be tied to VDD or can use a separate supply.
2.14
VPP program supply voltage
VPP is both a control input and a power supply pin. The two functions are selected by the
voltage range applied to the pin.
If VPP is kept in a low voltage range (0 V to VDDQ) VPP is seen as a control input. In this case
a voltage lower than VPPLK gives an absolute protection against program or erase, while
the relevant values). VPP is only sampled at the beginning of a program or erase; a change
in its value after the operation has started does not have any effect and program or erase
operations continue.
If VPP is in the range of VPPH it acts as a power supply pin. In this condition VPP must be
stable until the program/erase algorithm is completed.
2.15
VSS ground
VSS ground is the reference for the core supply and must be connected to the system
ground.
2.16
VSSQ ground
VSSQ ground is the reference for the input/output circuitry driven by VDDQ. VSSQ must be
connected to VSS.
Note:
Each device in a system should have VDD, VDDQ and VPP decoupled with a 0.1 F ceramic
capacitor close to the pin (high-frequency, inherently-low inductance capacitors should be
as close as possible to the package). See Figure 10: AC measurement load circuit. The
PCB track widths should be sufficient to carry the required VPP program and erase currents.
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| M3L13TCNFREQ | CRYSTAL OSCILLATOR, CLOCK, 1.544 MHz - 125 MHz, HCMOS OUTPUT |
| M3L14FCNFREQ | CRYSTAL OSCILLATOR, CLOCK, 1.544 MHz - 125 MHz, HCMOS OUTPUT |
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| M5L13TCNFREQ | CRYSTAL OSCILLATOR, CLOCK, 1.544 MHz - 125 MHz, HCMOS OUTPUT |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M58WR064T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:64 Mbit (4Mb x 16, Multiple Bank, Burst ) 1.8V Supply Flash Memory |
| M58WR064T100ZB6T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:64 Mbit (4Mb x 16, Multiple Bank, Burst ) 1.8V Supply Flash Memory |
| M58WR064T70ZB6T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:64 Mbit (4Mb x 16, Multiple Bank, Burst ) 1.8V Supply Flash Memory |
| M58WR064T85ZB6T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:64 Mbit (4Mb x 16, Multiple Bank, Burst ) 1.8V Supply Flash Memory |
| M58WR128EB | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory |
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