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参数资料
| 型号： | M58WR064KU70ZA6U |
| 厂商： | NUMONYX |
| 元件分类： | PROM |
| 英文描述： | 4M X 16 FLASH 1.8V PROM, 70 ns, PBGA44 |
| 封装： | 7.50 X 5 MM, 0.50 MM PITCH, ROHS COMPLIANT, VFBGA-44 |
| 文件页数： | 50/122页 |
| 文件大小： | 2187K |
| 代理商： | M58WR064KU70ZA6U |
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M58WRxxxKU, M58WRxxxKL
Command interface - factory program commands
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6.3
Enhanced Factory Program command
The Enhanced Factory Program command programs large streams of data within any one
block. It greatly reduces the total programming time when a large number of words are
written to a block at any one time.
The use of the Enhanced Factory Program command requires certain operating conditions.
●
VPP must be set to VPPH
●
VDD must be within operating range
●
Ambient temperature TA must be 30°C ± 10°C
●
The targeted block must be unlocked
Dual operations are not supported during the enhanced factory program operation and the
command cannot be suspended.
For optimum performance the Enhanced Factory Program commands should be limited to a
maximum of 100 program/erase cycles per block. If this limit is exceeded the internal
algorithm continues to work properly but some degradation in performance is possible.
Typical program times are given in Table 18. If the block is protected then the enhanced
factory program operation aborts, the data in the block does not change, and the status
register outputs the error.
The Enhanced Factory Program command has four phases: the setup phase, the program
phase to program the data to the memory, the verify phase to check that the data has been
correctly programmed and reprogram if necessary and the exit phase. Refer to Table 9:
6.3.1
Setup phase
The Enhanced Factory Program command requires two bus write operations to initiate the
command.
●
The first bus cycle sets up the Enhanced Factory Program command.
●
The second bus cycle confirms the command.
The status register P/EC SR7 should be read to check that the P/EC is ready. After the
confirm command is issued, read operations output the status register data. The Read
Status Register command must not be issued or it is interpreted as data to program.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| M58WR064T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:64 Mbit (4Mb x 16, Multiple Bank, Burst ) 1.8V Supply Flash Memory |
| M58WR064T100ZB6T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:64 Mbit (4Mb x 16, Multiple Bank, Burst ) 1.8V Supply Flash Memory |
| M58WR064T70ZB6T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:64 Mbit (4Mb x 16, Multiple Bank, Burst ) 1.8V Supply Flash Memory |
| M58WR064T85ZB6T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:64 Mbit (4Mb x 16, Multiple Bank, Burst ) 1.8V Supply Flash Memory |
| M58WR128EB | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory |
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