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参数资料
| 型号： | M58WR064KU70ZA6U |
| 厂商： | NUMONYX |
| 元件分类： | PROM |
| 英文描述： | 4M X 16 FLASH 1.8V PROM, 70 ns, PBGA44 |
| 封装： | 7.50 X 5 MM, 0.50 MM PITCH, ROHS COMPLIANT, VFBGA-44 |
| 文件页数： | 32/122页 |
| 文件大小： | 2187K |
| 代理商： | M58WR064KU70ZA6U |
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M58WRxxxKU, M58WRxxxKL
Signal descriptions
17/123
2
Signal descriptions
See Figure 1: Logic diagram and Table 1: Signal names for a brief overview of the signals
connected to this device.
2.1
Address inputs (ADQ0-ADQ15, A16-Amax)
Amax is equal to A19 in the M58WR016KU/L, to A20 in the M58WR032KU/L, and to A21 in
the M58WR064KU/L.
The address inputs select the cells in the memory array to access during bus read
operations. During bus write operations they control the commands sent to the command
interface of the program/erase controller.
2.2
Data input/output (ADQ0-ADQ15)
The data I/O outputs the data stored at the selected address during a bus read operation or
inputs a command or the data to be programmed during a bus write operation.
2.3
Chip Enable (E)
The Chip Enable input activates the memory control logic, input buffers, decoders and
sense amplifiers. When Chip Enable is at VILand Reset is at VIH the device is in active
mode. When Chip Enable is at VIH the memory is deselected, the outputs are high
impedance and the power consumption is reduced to the standby level.
2.4
Output Enable (G)
The Output Enable controls data outputs during the bus read operation of the memory.
2.5
Write Enable (W)
The Write Enable controls the bus write operation of the memory’s command interface. The
data is latched on the rising edge of Chip Enable or Write Enable, whichever occurs first.
2.6
Write Protect (WP)
Write Protect is an input that gives an additional hardware protection for each block. When
Write Protect is at VIL, the lock-down is enabled and the protection status of the locked-
down blocks cannot be changed. When Write Protect is at VIH, the lock-down is disabled
and the locked-down blocks can be locked or unlocked. (refer to Table 17: Lock status).
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| M3L14FCNFREQ | CRYSTAL OSCILLATOR, CLOCK, 1.544 MHz - 125 MHz, HCMOS OUTPUT |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| M58WR064T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:64 Mbit (4Mb x 16, Multiple Bank, Burst ) 1.8V Supply Flash Memory |
| M58WR064T100ZB6T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:64 Mbit (4Mb x 16, Multiple Bank, Burst ) 1.8V Supply Flash Memory |
| M58WR064T70ZB6T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:64 Mbit (4Mb x 16, Multiple Bank, Burst ) 1.8V Supply Flash Memory |
| M58WR064T85ZB6T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:64 Mbit (4Mb x 16, Multiple Bank, Burst ) 1.8V Supply Flash Memory |
| M58WR128EB | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory |
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