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参数资料
| 型号： | M58WR064KU70ZA6U |
| 厂商： | NUMONYX |
| 元件分类： | PROM |
| 英文描述： | 4M X 16 FLASH 1.8V PROM, 70 ns, PBGA44 |
| 封装： | 7.50 X 5 MM, 0.50 MM PITCH, ROHS COMPLIANT, VFBGA-44 |
| 文件页数： | 75/122页 |
| 文件大小： | 2187K |
| 代理商： | M58WR064KU70ZA6U |
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Block locking
M58WRxxxKU, M58WRxxxKL
11.4
Lock-down state
Blocks that are locked-down (state (0,1,x)) are protected from program and erase operations
(as for locked blocks) but their protection status cannot be changed using software
commands alone. A locked or unlocked block can be locked-down by issuing the Lock-Down
command. Locked-down blocks revert to the locked state when the device is reset or
powered-down.
The lock-down function is dependent on the WP input pin. When WP=0 (VIL), the blocks in
lock-down state (0,1,x) are protected from program, erase and protection status changes.
When WP=1 (VIH) the lock-down function is disabled (1,1,x) and locked-down blocks can be
individually unlocked to the (1,1,0) state by issuing the software command, where they can
be erased and programmed. These blocks can then be re-locked (1,1,1) and unlocked
(1,1,0) as desired while WP remains high. When WP is Low, blocks that were previously
locked-down return to the lock-down state (0,1,x) regardless of any changes made while WP
was high. Device reset or power-down resets all blocks, including those in lock-down, to the
locked state.
11.5
Locking operations during erase suspend
Changes to block lock status can be performed during an erase suspend by using the
standard locking command sequences to unlock, lock, or lock down a block. This is useful in
the case where another block needs to be updated while an erase operation is in progress.
To change block locking during an erase operation, first write the Erase Suspend command,
then check the status register until it indicates that the erase operation has been
suspended. Next, write the desired Lock command sequence to a block and the lock status
changes. After completing any desired lock, read, or program operations, resume the erase
operation with the Erase Resume command.
If a block is locked or locked down during an erase suspend of the same block, the locking
status bits change immediately, but when the erase is resumed the erase operation
completes. Locking operations cannot be performed during a program suspend. Refer to
Appendix D: Command interface state tables for detailed information on which commands
are valid during erase suspend.
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| M3L13TCNFREQ | CRYSTAL OSCILLATOR, CLOCK, 1.544 MHz - 125 MHz, HCMOS OUTPUT |
| M3L14FCNFREQ | CRYSTAL OSCILLATOR, CLOCK, 1.544 MHz - 125 MHz, HCMOS OUTPUT |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| M58WR064T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:64 Mbit (4Mb x 16, Multiple Bank, Burst ) 1.8V Supply Flash Memory |
| M58WR064T100ZB6T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:64 Mbit (4Mb x 16, Multiple Bank, Burst ) 1.8V Supply Flash Memory |
| M58WR064T70ZB6T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:64 Mbit (4Mb x 16, Multiple Bank, Burst ) 1.8V Supply Flash Memory |
| M58WR064T85ZB6T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:64 Mbit (4Mb x 16, Multiple Bank, Burst ) 1.8V Supply Flash Memory |
| M58WR128EB | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory |
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