参数资料
型号: M58WR064KU70ZA6U
厂商: NUMONYX
元件分类: PROM
英文描述: 4M X 16 FLASH 1.8V PROM, 70 ns, PBGA44
封装: 7.50 X 5 MM, 0.50 MM PITCH, ROHS COMPLIANT, VFBGA-44
文件页数: 8/122页
文件大小: 2187K
代理商: M58WR064KU70ZA6U
M58WRxxxKU, M58WRxxxKL
Flowcharts and pseudocodes
Figure 21.
Double word program flowchart and pseudocode
1.
Status check of b1 (protected block), b3 (VPP Invalid) and b4 (program error) can be made after each program operation or
after a sequence.
2.
If an error is found, the status register must be cleared before further program/erase operations.
3.
Address 1 and Address 2 must be consecutive addresses differing only for bit A0.
4.
Any address within the bank can equally be used.
Write 35h
AI06171b
Start
Write Address 1
& Data 1 (3, 4)
Read Status
Register (4)
YES
NO
SR7 = 1
YES
NO
SR3 = 0
NO
SR4 = 0
VPP Invalid
Error (1, 2)
Program
Error (1, 2)
YES
End
YES
NO
SR1 = 0
Program to Protected
Block Error (1, 2)
Write Address 2
& Data 2 (3)
double_word_program_command (addressToProgram1, dataToProgram1,
addressToProgram2, dataToProgram2)
{
writeToFlash (addressToProgram1, 0x35);
/*see note (4)*/
writeToFlash (addressToProgram1, dataToProgram1) ;
/*see note (3) */
writeToFlash (addressToProgram2, dataToProgram2) ;
/*see note (3) */
/*Memory enters read status state after
the Program command*/
do {
status_register=readFlash (addressToProgram) ;
"see note (4)"
/* E or G must be toggled*/
} while (status_register.SR7== 0) ;
if (status_register.SR3==1) /*VPP invalid error */
error_handler ( ) ;
if (status_register.SR4==1) /*program error */
error_handler ( ) ;
if (status_register.SR1==1) /*program to protect block error */
error_handler ( ) ;
}
相关PDF资料
PDF描述
M5L28FGNFREQ CRYSTAL OSCILLATOR, CLOCK, 1.544 MHz - 125 MHz, HCMOS OUTPUT
M3L13TCNFREQ CRYSTAL OSCILLATOR, CLOCK, 1.544 MHz - 125 MHz, HCMOS OUTPUT
M3L14FCNFREQ CRYSTAL OSCILLATOR, CLOCK, 1.544 MHz - 125 MHz, HCMOS OUTPUT
M3L15TGNFREQ CRYSTAL OSCILLATOR, CLOCK, 1.544 MHz - 125 MHz, HCMOS OUTPUT
M5L13TCNFREQ CRYSTAL OSCILLATOR, CLOCK, 1.544 MHz - 125 MHz, HCMOS OUTPUT
相关代理商/技术参数
参数描述
M58WR064T 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:64 Mbit (4Mb x 16, Multiple Bank, Burst ) 1.8V Supply Flash Memory
M58WR064T100ZB6T 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:64 Mbit (4Mb x 16, Multiple Bank, Burst ) 1.8V Supply Flash Memory
M58WR064T70ZB6T 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:64 Mbit (4Mb x 16, Multiple Bank, Burst ) 1.8V Supply Flash Memory
M58WR064T85ZB6T 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:64 Mbit (4Mb x 16, Multiple Bank, Burst ) 1.8V Supply Flash Memory
M58WR128EB 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory