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参数资料
| 型号： | M58WR064KU70ZA6U |
| 厂商： | NUMONYX |
| 元件分类： | PROM |
| 英文描述： | 4M X 16 FLASH 1.8V PROM, 70 ns, PBGA44 |
| 封装： | 7.50 X 5 MM, 0.50 MM PITCH, ROHS COMPLIANT, VFBGA-44 |
| 文件页数： | 39/122页 |
| 文件大小： | 2187K |
| 代理商： | M58WR064KU70ZA6U |
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M58WRxxxKU, M58WRxxxKL
Command interface - standard commands
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5
Command interface - standard commands
The following commands are the basic commands used to read, write to, and configure the
device. Refer to Table 7: Standard commands in conjunction with the following text
descriptions.
5.1
Read Array command
The Read Array command returns the addressed bank to read array mode. One bus write
cycle is required to issue the Read Array command and return the addressed bank to read
array mode. Subsequent read operations read the addressed location and output the data.
A Read Array command can be issued in one bank while programming or erasing in another
bank. However, if a Read Array command is issued to a bank currently executing a program
or erase operation the command is executed but the output data is not guaranteed.
5.2
Read Status Register command
The status register indicates when a program or erase operation is complete and the
success or failure of operation itself. Issue a Read Status Register command to read the
status register content. The Read Status Register command can be issued at any time,
even during program or erase operations.
The following read operations output the content of the status register of the addressed
bank. The status register is latched on the falling edge of E or G signals, and can be read
until E or G returns to VIH. Either E or G must be toggled to update the latched data. See
Table 10 for the description of the status register bits. This mode supports asynchronous or
single synchronous reads only.
5.3
Read Electronic Signature command
The Read Electronic Signature command reads the manufacturer and device codes, the
block locking status, the protection register, and the configuration register.
The Read Electronic Signature command consists of one write cycle to an address within
one of the banks. A subsequent read operation in the same bank outputs the manufacturer
code, the device code, the protection status of the blocks in the targeted bank, the
protection register, or the configuration register (see Table 8).
The Read Electronic Signature command can be issued at any time, even during program
or erase operations, except during protection register program operations. Dual operations
between the parameter bank and the electronic signature location are not allowed (see
Table 16: Dual operation limitations for details).
If a Read Electronic Signature command is issued in a bank that is executing a program or
erase operation the bank goes into read electronic signature mode, subsequent bus read
cycles output the electronic signature data, and the program/erase controller continues to
program or erase in the background. This mode only supports asynchronous or single
synchronous reads only; it does not support synchronous burst reads.
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| M3L13TCNFREQ | CRYSTAL OSCILLATOR, CLOCK, 1.544 MHz - 125 MHz, HCMOS OUTPUT |
| M3L14FCNFREQ | CRYSTAL OSCILLATOR, CLOCK, 1.544 MHz - 125 MHz, HCMOS OUTPUT |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| M58WR064T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:64 Mbit (4Mb x 16, Multiple Bank, Burst ) 1.8V Supply Flash Memory |
| M58WR064T100ZB6T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:64 Mbit (4Mb x 16, Multiple Bank, Burst ) 1.8V Supply Flash Memory |
| M58WR064T70ZB6T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:64 Mbit (4Mb x 16, Multiple Bank, Burst ) 1.8V Supply Flash Memory |
| M58WR064T85ZB6T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:64 Mbit (4Mb x 16, Multiple Bank, Burst ) 1.8V Supply Flash Memory |
| M58WR128EB | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory |
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