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参数资料
| 型号： | M58WR064KU70ZA6U |
| 厂商： | NUMONYX |
| 元件分类： | PROM |
| 英文描述： | 4M X 16 FLASH 1.8V PROM, 70 ns, PBGA44 |
| 封装： | 7.50 X 5 MM, 0.50 MM PITCH, ROHS COMPLIANT, VFBGA-44 |
| 文件页数： | 72/122页 |
| 文件大小： | 2187K |
| 代理商： | M58WR064KU70ZA6U |
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M58WRxxxKU, M58WRxxxKL
Dual operations and multiple bank architecture
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10
Dual operations and multiple bank architecture
The multiple bank architecture of the M58WRxxxKU/L provides flexibility for software
developers by allowing code and data to be split with 4-Mbit granularity. The dual operations
feature simplifies the software management of the device and allows code to be executed
from one bank while another bank is being programmed or erased.
The dual operations feature means that while programming or erasing in one bank, read
operations are possible in another bank with zero latency (only one bank at a time is allowed
to be in program or erase mode). If a read operation is required in a bank that is
programming or erasing, the program or erase operation can be suspended. Also, if the
suspended operation is erase then a program command can be issued to another block; this
means it is possible to have one block in erase suspend mode, one programming, and other
banks in read mode. Bus read operations are allowed in another bank between setup and
confirm cycles of program or erase operations. The combination of these features means
that read operations are possible at any moment.
Dual operations between the parameter bank and either of the CFI, the OTP, or the
electronic signature memory space are not allowed. Table 16 shows which dual operations
are allowed or not between the CFI, the OTP, the electronic signature locations, and the
memory array.
Note that only the commonly used commands are represented in these tables. For a
complete list of possible commands refer to Appendix D: Command interface state tables.
Table 14.
Dual operations allowed in other banks
Status of
bank
Commands allowed in another bank
Read
Array
Read
Status
Register
Read
CFI
Query
Read
Electronic
Signature
Program Erase
Program/
Erase
Suspend
Program/
Erase
Resume
Idle
Yes
Programming
Yes
–
Yes
–
Erasing
Yes
–
Yes
–
Program
suspended
Yes
–
Yes
Erase
suspended
Yes
–
Yes
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相关代理商/技术参数 |
参数描述 |
|---|---|
| M58WR064T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:64 Mbit (4Mb x 16, Multiple Bank, Burst ) 1.8V Supply Flash Memory |
| M58WR064T100ZB6T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:64 Mbit (4Mb x 16, Multiple Bank, Burst ) 1.8V Supply Flash Memory |
| M58WR064T70ZB6T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:64 Mbit (4Mb x 16, Multiple Bank, Burst ) 1.8V Supply Flash Memory |
| M58WR064T85ZB6T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:64 Mbit (4Mb x 16, Multiple Bank, Burst ) 1.8V Supply Flash Memory |
| M58WR128EB | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory |
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