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参数资料
| 型号： | M58WR064KU70ZA6U |
| 厂商： | NUMONYX |
| 元件分类： | PROM |
| 英文描述： | 4M X 16 FLASH 1.8V PROM, 70 ns, PBGA44 |
| 封装： | 7.50 X 5 MM, 0.50 MM PITCH, ROHS COMPLIANT, VFBGA-44 |
| 文件页数： | 42/122页 |
| 文件大小： | 2187K |
| 代理商： | M58WR064KU70ZA6U |
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Command interface - standard commands
M58WRxxxKU, M58WRxxxKL
See Appendix C, Figure 20: Program flowchart and pseudocode for the flowchart for using
the Program command.
5.8
Program/Erase Suspend command
The Program/Erase Suspend command pauses a program or block erase operation.
One bus write cycle is required to issue the Program/Erase Suspend command. Once the
program/erase controller has paused bits SR7, SR6 and/ or SR2 of the status register are
set to ‘1’. The command can be addressed to any bank.
During Program/Erase Suspend the command interface accepts the Program/Erase
Resume, Read Array (cannot read the suspended block), Read Status Register, Read
Electronic Signature, and Read CFI Query commands. In addition, if the suspended
operation is erase then the Clear Status Register, Set Configuration Register, Program,
Block Lock, Block Lock-Down or Block Unlock commands are also accepted. The block
being erased may be protected by issuing the Block Lock or Block Lock-down commands.
Only the blocks not being erased may be read or programmed correctly. When the
Program/Erase Resume command is issued the operation completes. Refer to Section 10:
Dual operations and multiple bank architecture for detailed information about simultaneous
operations allowed during Program/Erase Suspend.
During a Program/Erase Suspend, the device can be placed in standby mode by taking
Chip Enable to VIH. Program/erase is aborted if Reset turns to VIL.
Figure 25: Erase suspend and resume flowchart and pseudocode for flowcharts for using
the Program/Erase Suspend command.
5.9
Program/Erase Resume command
The Program/Erase Resume command restarts the program/erase controller after a
Program/Erase Suspend command has paused it. One bus write cycle is required to issue
the command. The command can be written to any address.
The Program/Erase Resume command does not change the read mode of the banks. If the
suspended bank was in read status register, read electronic signature, or read CFI query
mode the bank remains in that mode and outputs the corresponding data. If the bank was in
read array mode, subsequent read operations outputs invalid data.
If a program command is issued during a Block Erase Suspend then the erase cannot be
resumed until the programming operation has completed. It is possible to accumulate
suspend operations. For example, it is possible to suspend an erase operation, start a
programming operation, suspend the programming operation, and then read the array. See
Figure 25: Erase suspend and resume flowchart and pseudocode for flowcharts for using
the Program/Erase Resume command.
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| M3L14FCNFREQ | CRYSTAL OSCILLATOR, CLOCK, 1.544 MHz - 125 MHz, HCMOS OUTPUT |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| M58WR064T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:64 Mbit (4Mb x 16, Multiple Bank, Burst ) 1.8V Supply Flash Memory |
| M58WR064T100ZB6T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:64 Mbit (4Mb x 16, Multiple Bank, Burst ) 1.8V Supply Flash Memory |
| M58WR064T70ZB6T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:64 Mbit (4Mb x 16, Multiple Bank, Burst ) 1.8V Supply Flash Memory |
| M58WR064T85ZB6T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:64 Mbit (4Mb x 16, Multiple Bank, Burst ) 1.8V Supply Flash Memory |
| M58WR128EB | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory |
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